Analysis of the output conductance degradation with the substrate bias in SOI UTB and UTBB transistors
N/D
Tipo de produção
Artigo de evento
Data de publicação
2018-08-31
Texto completo (DOI)
Periódico
33rd Symposium on Microelectronics Technology and Devices, SBMicro 2018
Editor
Texto completo na Scopus
Citações na Scopus
4
Autores
FERNO COSTA, J.
TREVISOLI, R.
Rodrigo Doria
Orientadores
Resumo
© 2018 IEEE.The goal of this work is to present the behavior of the output conductance in Ultra-Thin Body (UTB) and Ultra-Thin Body and Buried Oxide (UTBB) SOI {MOSFETs with the application of a selected set of back gate biases (VSUB) through AC simulations, in devices with and without considering the effect of the ground plane. It has been shown that the output conductance degradation due to self-heating and substrate effects increases as the substrate bias is reduced. The output conductance degradation by self-heating presents a reduction of about 52% and by substrate effects of 57% by simply increasing the back bias from-2V up to 2 V.
Citação
FERNO COSTA, J.; TREVISOLI, R.; DORIA, R. Analysis of the output conductance degradation with the substrate bias in SOI UTB and UTBB transistors. 33rd Symposium on Microelectronics Technology and Devices, SBMicro 2018, 2018.
Palavras-chave
Keywords
Output Conductance; Self-Heating Effect; SOI Technology; UTB; UTBB
Assuntos Scopus
Back-gate bias; Effect of the ground; Output conductance; Self-heating effect; SOI technology; Substrate effects; Ultra-thin-body; UTBB