Thin-film lateral SOI pin diodes for thermal sensing reaching the cryogenic regime
Arquivos
Tipo de produção
Artigo
Data de publicação
2010-09-01
Periódico
Journal of Integrated Circuits and Systems
Editor
Texto completo na Scopus
Citações na Scopus
17
Autores
Michelly De Souza
RUE, B.
FLANDRE, D.
Marcelo Antonio Pavanello
Orientadores
Resumo
This paper presents the performance of lateral SOI PIN diodes for temperature sensing in the range of 100 K to 400 K. Experimental results indicate that PIN diodes can be used to implement temperature sensors with high accuracy in cryogenic regime, provided that a suitable temperature range is chosen for calibration. Numerical simulations using Atlas two-dimensional simulator were performed in order to confirm this hypothesis and extend the analysis, verifying the accuracy of the existing model.
Citação
DE SOUZA, M.; RUE, B.; FLANDRE, D.; PAVANELLO, M. A. Thin-film lateral SOI pin diodes for thermal sensing reaching the cryogenic regime. Journal of Integrated Circuits and Systems, v. 5, n. 2, p.
DE SOUZA, M.; RUE, B.; FLANDRE, D.; PAVANELLO, M. A. Thin-film lateral SOI pin diodes for thermal sensing reaching the cryogenic regime. Journal of Integrated Circuits and Systems, v. 5, n. 2, sept. 2010.
DE SOUZA, M.; RUE, B.; FLANDRE, D.; PAVANELLO, M. A. Thin-film lateral SOI pin diodes for thermal sensing reaching the cryogenic regime. Journal of Integrated Circuits and Systems, v. 5, n. 2, sept. 2010.
Palavras-chave
Keywords
Low temperature; PIN diode; SOI; Temperature sensor