Thin-film lateral SOI pin diodes for thermal sensing reaching the cryogenic regime
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2010-09-01
Autores
Michelly De Souza
RUE, B.
FLANDRE, D.
Marcelo Antonio Pavanello
RUE, B.
FLANDRE, D.
Marcelo Antonio Pavanello
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Journal of Integrated Circuits and Systems
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DE SOUZA, M.; RUE, B.; FLANDRE, D.; PAVANELLO, M. A. Thin-film lateral SOI pin diodes for thermal sensing reaching the cryogenic regime. Journal of Integrated Circuits and Systems, v. 5, n. 2, p.
DE SOUZA, M.; RUE, B.; FLANDRE, D.; PAVANELLO, M. A. Thin-film lateral SOI pin diodes for thermal sensing reaching the cryogenic regime. Journal of Integrated Circuits and Systems, v. 5, n. 2, sept. 2010.
DE SOUZA, M.; RUE, B.; FLANDRE, D.; PAVANELLO, M. A. Thin-film lateral SOI pin diodes for thermal sensing reaching the cryogenic regime. Journal of Integrated Circuits and Systems, v. 5, n. 2, sept. 2010.
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This paper presents the performance of lateral SOI PIN diodes for temperature sensing in the range of 100 K to 400 K. Experimental results indicate that PIN diodes can be used to implement temperature sensors with high accuracy in cryogenic regime, provided that a suitable temperature range is chosen for calibration. Numerical simulations using Atlas two-dimensional simulator were performed in order to confirm this hypothesis and extend the analysis, verifying the accuracy of the existing model.