Study of the drain leakage current behavior in circular gate SOI nMOSFET using 0.13μm SOI CMOS technology at high temperatures

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2007
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ALMEIDA, L. M.
BELLODI, M.
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ECS Transactions
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ALMEIDA, L. M.; BELLODI, M. Study of the drain leakage current behavior in circular gate SOI nMOSFET using 0.13μm SOI CMOS technology at high temperatures. ECS Transactions, v. 9, n. 1, p. 397-404, Sept. 2007.
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It is presented numerical tridimensional simulations results concerning to the evolution of the drain leakage current behavior in Circular Gate SOI nMOSFETs operating from room temperature up to 573K. The results show that the leakage current behavior depends strongly on the channel length. Also, it was observed that the leakage current density distribution is non uniform along the silicon film thickness and it depends on the channel length and changes as the temperature goes up. © The Electrochemical Society.

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