SOI PIN diodes for temperature sensing in harsh environment
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2009-09-13
Autores
RUE, B.
Michelly De Souza
Marcelo Antonio Pavanello
FLANDRE, D.
Michelly De Souza
Marcelo Antonio Pavanello
FLANDRE, D.
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Periódico
Proceedings - 2009 IMAPS International Conference on High Temperature Electronics Network, HiTEN 2009
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RUE, B.; DE SOUZA, M.; PAVANELLO, M. A.; FLANDRE, D. SOI PIN diodes for temperature sensing in harsh environment. Proceedings - 2009 IMAPS International Conference on High Temperature Electronics Network, HiTEN 2009, p. 64-69, sept. 2009.
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We study the use of lateral SOI PIN diodes as thermometers in a large range of temperature from 100 K to 575 K and under radiations. These diodes indeed show very linear voltage vs temperature characteristics when biased with a constant current and can be successfully used in an integrated temperature sensor. The diodes are implemented in three SOI technologies: UCL 2μm process, Xfab1μm and OKI 0.15μm industrial processes. The OKI diode characteristics after neutron irradiation are also discussed.