SOI PIN diodes for temperature sensing in harsh environment
N/D
Tipo de produção
Artigo de evento
Data de publicação
2009-09-13
Periódico
Proceedings - 2009 IMAPS International Conference on High Temperature Electronics Network, HiTEN 2009
Editor
Texto completo na Scopus
Citações na Scopus
0
Autores
RUE, B.
Michelly De Souza
Marcelo Antonio Pavanello
FLANDRE, D.
Orientadores
Resumo
We study the use of lateral SOI PIN diodes as thermometers in a large range of temperature from 100 K to 575 K and under radiations. These diodes indeed show very linear voltage vs temperature characteristics when biased with a constant current and can be successfully used in an integrated temperature sensor. The diodes are implemented in three SOI technologies: UCL 2μm process, Xfab1μm and OKI 0.15μm industrial processes. The OKI diode characteristics after neutron irradiation are also discussed.
Citação
RUE, B.; DE SOUZA, M.; PAVANELLO, M. A.; FLANDRE, D. SOI PIN diodes for temperature sensing in harsh environment. Proceedings - 2009 IMAPS International Conference on High Temperature Electronics Network, HiTEN 2009, p. 64-69, sept. 2009.
Palavras-chave
Keywords
High temperature; Irradiation; Low temperature; SOI PIN diode; Temperature sensor
Assuntos Scopus
Diode characteristics; Harsh environment; High temperature; Industrial processs; Low temperatures; PiN diode; Temperature characteristic; Temperature sensing