Variability Modeling in Triple-Gate Junctionless Nanowire Transistors

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dc.contributor.authorTREVISOLI, R.
dc.contributor.authorMarcelo Antonio Pavanello
dc.contributor.authorRodrigo Doria
dc.contributor.authorCAPOVILLA, C.E.
dc.contributor.authorBARRAUD, S.
dc.contributor.authorMichelly De Souza
dc.contributor.authorOrcidhttps://orcid.org/0000-0003-1361-3650
dc.contributor.authorOrcidhttps://orcid.org/0000-0003-4448-4337
dc.contributor.authorOrcidhttps://orcid.org/0000-0001-6472-4807
dc.date.accessioned2022-08-01T06:02:52Z
dc.date.available2022-08-01T06:02:52Z
dc.date.issued2022-01-05
dc.description.abstractIEEEThis work aims at proposing an analytical model for the variability of the threshold voltage and drain current in junctionless nanowire transistors. The model is continuous in all operation regions and has been validated through Monte Carlo simulations using a physically based drain current model and 3-D numerical simulations. A discussion about the influences of each variability source based on the proposed model is carried out. Finally, the modeled results are compared to the experimental data for a fully physical validation.
dc.identifier.citationTREVISOLI, R.; PAVANELLO, M. A.; DORIA, R.; CAPOVILLA, C.E.; BARRAUD, S.; DE SOUZA, M. Variability Modeling in Triple-Gate Junctionless Nanowire Transistors. IEEE Transactions on Electron Devices, 2022.
dc.identifier.doi10.1109/TED.2022.3180303
dc.identifier.issn1557-9646
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/4543
dc.relation.ispartofIEEE Transactions on Electron Devices
dc.rightsAcesso Restrito
dc.subject.otherlanguageAnalytical model
dc.subject.otherlanguagejunctionless
dc.subject.otherlanguagenanowire
dc.subject.otherlanguagevariability
dc.titleVariability Modeling in Triple-Gate Junctionless Nanowire Transistors
dc.typeArtigo
fei.scopus.citations5
fei.scopus.eid2-s2.0-85132789116
fei.scopus.subject3-D numerical simulation
fei.scopus.subjectDrain-current modeling
fei.scopus.subjectJunctionless
fei.scopus.subjectMonte Carlo's simulation
fei.scopus.subjectNanowire transistors
fei.scopus.subjectOperation regions
fei.scopus.subjectPhysically based
fei.scopus.subjectTriple-gate
fei.scopus.subjectVariability
fei.scopus.subjectVariability modeling
fei.scopus.updated2024-12-01
fei.scopus.urlhttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85132789116&origin=inward
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