Influence of the crystal orientation on the operation of junctionless nanowire transistors
N/D
Tipo de produção
Artigo de evento
Data de publicação
2017-01-03
Texto completo (DOI)
Periódico
2016 SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2016
Editor
Texto completo na Scopus
Citações na Scopus
4
Autores
TREVISOLI, R.
Rodrido Doria
Michelly De Souza
Marcelo Antonio Pavanello
BARRAUD, S.
VINET, M.
Orientadores
Marcelo Antonio Pavanello
Resumo
This work presents, for the first time, an analysis of the influence of the crystal orientation on the electrical performance of Junctionless Nanowire Transistors. Experimental results demonstrate that the device rotation from the standard <110> to the <100> direction over a (100) SOI wafer can significantly degrade the performance of the transistors.
Citação
TREVISOLI, R.; DORIA, R.; DE SOUZA, M.; PAVANELLO, M. A.; BARRAUD, S.; VINET, M. Influence of the crystal orientation on the operation of junctionless nanowire transistors. 2016 SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2016. Jan. 2017.
Palavras-chave
Keywords
ION/IOFF ratio; Junctionless Nanowires Transistors; Orientation; Transconductance
Assuntos Scopus
Electrical performance; Nanowire transistors; Nanowires transistors; SOI wafers