Influence of the crystal orientation on the operation of junctionless nanowire transistors
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2017-01-03
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TREVISOLI, R.
Rodrido Doria
Michelly De Souza
Marcelo Antonio Pavanello
BARRAUD, S.
VINET, M.
Rodrido Doria
Michelly De Souza
Marcelo Antonio Pavanello
BARRAUD, S.
VINET, M.
Orientador
Marcelo Antonio Pavanello
Periódico
2016 SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2016
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TREVISOLI, R.; DORIA, R.; DE SOUZA, M.; PAVANELLO, M. A.; BARRAUD, S.; VINET, M. Influence of the crystal orientation on the operation of junctionless nanowire transistors. 2016 SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2016. Jan. 2017.
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This work presents, for the first time, an analysis of the influence of the crystal orientation on the electrical performance of Junctionless Nanowire Transistors. Experimental results demonstrate that the device rotation from the standard <110> to the <100> direction over a (100) SOI wafer can significantly degrade the performance of the transistors.