A New Method for Series Resistance Extraction of Nanometer MOSFETs
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15
Tipo de produção
Artigo
Data
2017-07-05
Autores
TREVISOLI, R.
Rodrido Doria
Michelly De Souza
BARRAUD, S.
VINET, M.
CASSE, M.
REIMBOLD, G.
FAYNOT, O.
GHIBAUDO, G.
Marcelo Antonio Pavanello
Rodrido Doria
Michelly De Souza
BARRAUD, S.
VINET, M.
CASSE, M.
REIMBOLD, G.
FAYNOT, O.
GHIBAUDO, G.
Marcelo Antonio Pavanello
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Periódico
IEEE Transactions on Electron Devices
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This paper presents a new method for the series resistance extraction in ultimate MOSFETs using a single drain current versus gate voltage characteristic curve. The method is based on the Y-function curve, such that the series resistance is obtained through the curve of the total resistance as a function of the inverse of the Y-function. It includes both first-and second-order mobility degradation factors. To validate the proposed method, numerical simulations have been performed for devices of different characteristics. Besides, the method applicability has been demonstrated for experimental silicon nanowires and FinFETs. Apart from that, devices with different channel lengths can be used to estimate the mobility degradation factor influence.