A New Method for Series Resistance Extraction of Nanometer MOSFETs

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dc.contributor.authorTREVISOLI, R.
dc.contributor.authorRodrido Doria
dc.contributor.authorMichelly De Souza
dc.contributor.authorBARRAUD, S.
dc.contributor.authorVINET, M.
dc.contributor.authorCASSE, M.
dc.contributor.authorREIMBOLD, G.
dc.contributor.authorFAYNOT, O.
dc.contributor.authorGHIBAUDO, G.
dc.contributor.authorMarcelo Antonio Pavanello
dc.contributor.authorOrcidhttps://orcid.org/0000-0003-4448-4337
dc.contributor.authorOrcidhttps://orcid.org/0000-0001-6472-4807
dc.contributor.authorOrcidhttps://orcid.org/0000-0003-1361-3650
dc.date.accessioned2022-01-12T21:58:04Z
dc.date.available2022-01-12T21:58:04Z
dc.date.issued2017-07-05
dc.description.abstractThis paper presents a new method for the series resistance extraction in ultimate MOSFETs using a single drain current versus gate voltage characteristic curve. The method is based on the Y-function curve, such that the series resistance is obtained through the curve of the total resistance as a function of the inverse of the Y-function. It includes both first-and second-order mobility degradation factors. To validate the proposed method, numerical simulations have been performed for devices of different characteristics. Besides, the method applicability has been demonstrated for experimental silicon nanowires and FinFETs. Apart from that, devices with different channel lengths can be used to estimate the mobility degradation factor influence.
dc.description.firstpage2797
dc.description.issuenumber7
dc.description.lastpage2803
dc.description.volume64
dc.identifier.doi10.1109/TED.2017.2704928
dc.identifier.issn0018-9383
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/3836
dc.relation.ispartofIEEE Transactions on Electron Devices
dc.rightsAcesso Restrito
dc.subject.otherlanguageExtraction method
dc.subject.otherlanguageMOSFETs
dc.subject.otherlanguagenanowires
dc.subject.otherlanguageseries resistance
dc.titleA New Method for Series Resistance Extraction of Nanometer MOSFETs
dc.typeArtigo
fei.scopus.citations15
fei.scopus.eid2-s2.0-85020099682
fei.scopus.subjectChannel length
fei.scopus.subjectExtraction method
fei.scopus.subjectMobility degradation
fei.scopus.subjectMOSFETs
fei.scopus.subjectSecond orders
fei.scopus.subjectSeries resistances
fei.scopus.subjectSilicon nanowires
fei.scopus.subjectTotal resistance
fei.scopus.updated2023-11-01
fei.scopus.urlhttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85020099682&origin=inward
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