Effect of channel doping concentration on the harmonic distortion of asymmetric n-and p-type self-cascode MOSFETs
N/D
Tipo de produção
Artigo de evento
Data de publicação
2015-09-04
Texto completo (DOI)
Periódico
SBMicro 2015 - 30th Symposium on Microelectronics Technology and Devices
Editor
Texto completo na Scopus
Citações na Scopus
0
Autores
D´OLIVEIRA, L. M.
Rodrido Doria
Marcelo Antonio Pavanello
FLANDRE. D.
Michelly De Souza
Orientadores
Resumo
© 2015 IEEE.This paper compares the harmonic distortion of n-and p-type symmetric (S-SC) and asymmetric self-cascode (A-SC) structures of different channel doping concentrations, providing a physic analysis of its behavior. This study is made by experimental measurements of structures composed by n-and p-type MOSFETs taking the second and third order harmonics as figures of merit. For strong inversion, the normalized second order harmonic distortion was better for the A-SC structures composed by devices with lower channel doping concentration on the transistor near the drain for either n-and p-type composite MOSFETs.
Citação
D´OLIVEIRA, L. M.; DORIA, R.; PAVANELLO, M. A.; FLANDRE, D.; DE SOUZA, M. Effect of channel doping concentration on the harmonic distortion of asymmetric n-and p-type self-cascode MOSFETs. SBMicro 2015 - 30th Symposium on Microelectronics Technology and Devices, Sept. 2015.
Palavras-chave
Keywords
Asymmetric Self-Cascode; Harmonic Distortion; SOI nMOSFETs; SOI pMOSFETs; Symmetric Self-Cascode
Assuntos Scopus
Channel dopings; Figures of merits; Measurements of; p-MOSFETs; Self-cascode; SOI n-MOSFETs; Strong inversion; Third order harmonics