Effect of channel doping concentration on the harmonic distortion of asymmetric n-and p-type self-cascode MOSFETs
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2015-09-04
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D´OLIVEIRA, L. M.
Rodrido Doria
Marcelo Antonio Pavanello
FLANDRE. D.
Michelly De Souza
Rodrido Doria
Marcelo Antonio Pavanello
FLANDRE. D.
Michelly De Souza
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SBMicro 2015 - 30th Symposium on Microelectronics Technology and Devices
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D´OLIVEIRA, L. M.; DORIA, R.; PAVANELLO, M. A.; FLANDRE, D.; DE SOUZA, M. Effect of channel doping concentration on the harmonic distortion of asymmetric n-and p-type self-cascode MOSFETs. SBMicro 2015 - 30th Symposium on Microelectronics Technology and Devices, Sept. 2015.
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© 2015 IEEE.This paper compares the harmonic distortion of n-and p-type symmetric (S-SC) and asymmetric self-cascode (A-SC) structures of different channel doping concentrations, providing a physic analysis of its behavior. This study is made by experimental measurements of structures composed by n-and p-type MOSFETs taking the second and third order harmonics as figures of merit. For strong inversion, the normalized second order harmonic distortion was better for the A-SC structures composed by devices with lower channel doping concentration on the transistor near the drain for either n-and p-type composite MOSFETs.