Effect of channel doping concentration on the harmonic distortion of asymmetric n-and p-type self-cascode MOSFETs

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dc.contributor.authorD´OLIVEIRA, L. M.
dc.contributor.authorRodrido Doria
dc.contributor.authorMarcelo Antonio Pavanello
dc.contributor.authorFLANDRE. D.
dc.contributor.authorMichelly De Souza
dc.contributor.authorOrcidhttps://orcid.org/0000-0003-4448-4337
dc.contributor.authorOrcidhttps://orcid.org/0000-0003-1361-3650
dc.contributor.authorOrcidhttps://orcid.org/0000-0001-6472-4807
dc.date.accessioned2022-01-12T21:59:43Z
dc.date.available2022-01-12T21:59:43Z
dc.date.issued2015-09-04
dc.description.abstract© 2015 IEEE.This paper compares the harmonic distortion of n-and p-type symmetric (S-SC) and asymmetric self-cascode (A-SC) structures of different channel doping concentrations, providing a physic analysis of its behavior. This study is made by experimental measurements of structures composed by n-and p-type MOSFETs taking the second and third order harmonics as figures of merit. For strong inversion, the normalized second order harmonic distortion was better for the A-SC structures composed by devices with lower channel doping concentration on the transistor near the drain for either n-and p-type composite MOSFETs.
dc.identifier.citationD´OLIVEIRA, L. M.; DORIA, R.; PAVANELLO, M. A.; FLANDRE, D.; DE SOUZA, M. Effect of channel doping concentration on the harmonic distortion of asymmetric n-and p-type self-cascode MOSFETs. SBMicro 2015 - 30th Symposium on Microelectronics Technology and Devices, Sept. 2015.
dc.identifier.doi10.1109/SBMicro.2015.7298135
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/3951
dc.relation.ispartofSBMicro 2015 - 30th Symposium on Microelectronics Technology and Devices
dc.rightsAcesso Restrito
dc.subject.otherlanguageAsymmetric Self-Cascode
dc.subject.otherlanguageHarmonic Distortion
dc.subject.otherlanguageSOI nMOSFETs
dc.subject.otherlanguageSOI pMOSFETs
dc.subject.otherlanguageSymmetric Self-Cascode
dc.titleEffect of channel doping concentration on the harmonic distortion of asymmetric n-and p-type self-cascode MOSFETs
dc.typeArtigo de evento
fei.scopus.citations0
fei.scopus.eid2-s2.0-84961822780
fei.scopus.subjectChannel dopings
fei.scopus.subjectFigures of merits
fei.scopus.subjectMeasurements of
fei.scopus.subjectp-MOSFETs
fei.scopus.subjectSelf-cascode
fei.scopus.subjectSOI n-MOSFETs
fei.scopus.subjectStrong inversion
fei.scopus.subjectThird order harmonics
fei.scopus.updated2024-07-01
fei.scopus.urlhttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84961822780&origin=inward
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