Influence of fin width variation on the electrical characteristics of n-type junctionless nanowire transistors at high temperatures

dc.contributor.advisorRIBEIRO, T. A.; BERGAMASCHI, F.E.; BARRAUD, S.; PAVANELLO, M. A. Influence of fin width variation on the electrical characteristics of n-type junctionless nanowire transistors at high temperatures. v. 185, nov. 2021.
dc.contributor.authorRIBEIRO, T. A.
dc.contributor.authorBERGAMASCHI, F.E.
dc.contributor.authorBARRAUD, S.
dc.contributor.authorMarcelo Antonio Pavanello
dc.contributor.authorOrcidhttps://orcid.org/0000-0003-1361-3650
dc.date.accessioned2022-01-12T21:53:32Z
dc.date.available2022-01-12T21:53:32Z
dc.date.issued2021-11-21
dc.description.abstractThis work studied the effects of the fin width variation on Silicon-on-Insulator Junctionless Nanowire Transistors (JNTs) working in the temperature range of 300 K to 500 K. The effects of the temperature on the measured drain current and gate capacitance, and on the extracted electrical parameters such as the threshold voltage, the subthreshold slope, and the electron mobility were analyzed. Results show that JNTs with larger fin width may present better carrier mobility at a higher temperature than narrow ones as the degradation due to phonon scattering is decreased and the impurity scattering becomes more relevant. It is demonstrated that JNTs with narrow fin width show higher phonon scattering and higher mobility variation with the temperature than wider ones.
dc.description.volume185
dc.identifier.doi10.1016/j.sse.2021.108072
dc.identifier.issn0038-1101
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/3549
dc.relation.ispartofSolid-State Electronics
dc.rightsAcesso Restrito
dc.subject.otherlanguageElectron mobility
dc.subject.otherlanguageHigh temperature
dc.subject.otherlanguageJunctionless
dc.subject.otherlanguageSOI
dc.titleInfluence of fin width variation on the electrical characteristics of n-type junctionless nanowire transistors at high temperatures
dc.typeArtigo
fei.scopus.citations1
fei.scopus.eid2-s2.0-85108105231
fei.scopus.subjectElectrical characteristic
fei.scopus.subjectElectrical parameter
fei.scopus.subjectHigh temperature
fei.scopus.subjectImpurity scattering
fei.scopus.subjectMobility variation
fei.scopus.subjectNanowire transistors
fei.scopus.subjectSubthreshold slope
fei.scopus.subjectTemperature range
fei.scopus.updated2024-05-01
fei.scopus.urlhttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85108105231&origin=inward
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