Quasi-static analytical model for the dynamic operation of triple-gate junctionless nanowire transistors
N/D
Tipo de produção
Artigo de evento
Data de publicação
2015-11-20
Texto completo (DOI)
Periódico
2015 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2015
Editor
Texto completo na Scopus
Citações na Scopus
1
Autores
TREVISOLLI, R.
Rodrido Doria
Michelly De Souza
Marcelo Antonio Pavanello
Orientadores
Resumo
This work presents, for the first time, an analytical and explicit model for the intrinsic transcapacitances and transconductances of triple-gate Junctionless Nanowire Transistors. The expressions are derived from a surface potential-based charge model and are validated with 3D TCAD numerical simulations.
Citação
TREVISOLLI, R.; DORIA R. DE SOUZA, M. PAVANELLO, M. A. Quasi-static analytical model for the dynamic operation of triple-gate junctionless nanowire transistors. 2015 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2015, Nov. 2015.
Palavras-chave
Keywords
Junctionless Nanowire Transistors; Modeling; Transcapacitances
Assuntos Scopus
Charge models; Dynamic operations; Explicit modeling; Nanowire transistors; Quasi-static; Surface potential-based; Transcapacitances; Triple-gate