Quasi-static analytical model for the dynamic operation of triple-gate junctionless nanowire transistors
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2015-11-20
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TREVISOLLI, R.
Rodrido Doria
Michelly De Souza
Marcelo Antonio Pavanello
Rodrido Doria
Michelly De Souza
Marcelo Antonio Pavanello
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2015 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2015
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TREVISOLLI, R.; DORIA R. DE SOUZA, M. PAVANELLO, M. A. Quasi-static analytical model for the dynamic operation of triple-gate junctionless nanowire transistors. 2015 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2015, Nov. 2015.
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This work presents, for the first time, an analytical and explicit model for the intrinsic transcapacitances and transconductances of triple-gate Junctionless Nanowire Transistors. The expressions are derived from a surface potential-based charge model and are validated with 3D TCAD numerical simulations.