Advantages of subthreshold operation of asymmetric self-cascode SOI transistors aiming at analog circuit applications
N/D
Tipo de produção
Artigo de evento
Data de publicação
2015-11-20
Texto completo (DOI)
Periódico
2015 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2015
Editor
Texto completo na Scopus
Citações na Scopus
2
Autores
Michelly De Souza
Marcelo Antonio Pavanello
FLANDRE, D.
Orientadores
Resumo
This paper presents the analog characteristics of asymmetric self-cascode SOI nMOSFETs biased in subthreshold region aiming at low power low voltage analog applications. It is shown for the first time that the advantages of this structure in comparison to single transistors and symmetric self-cascode is sustained below threshold and improves as device moves to subthreshold.
Citação
DE SOUZA, M. PAVANELLO, M. A.; FLANDRE, D. Advantages of subthreshold operation of asymmetric self-cascode SOI transistors aiming at analog circuit applications. 2015 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2015. Nov. 2015.
Palavras-chave
Keywords
Asymmetric structure; Low-power; Self-cascode; SOI MOSFET; Subthreshold
Assuntos Scopus
Asymmetric structures; Low Power; Self-cascode; SOI-MOSFETs; Subthreshold