Radiation hardness aspects of advanced FinFET and UTBOX devices
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2012-10-04
Autores
CLAEYS, C.
AOULAICHE, M.
SIMOEN. E.
GRIFFONI, A.
KOBAYASHI, D.
MAHATME, N. N.
REED. R. A.
SCHRUMPF, R. D.
AGOPIAN, P. G. D.
MARTINO, J. A.
AOULAICHE, M.
SIMOEN. E.
GRIFFONI, A.
KOBAYASHI, D.
MAHATME, N. N.
REED. R. A.
SCHRUMPF, R. D.
AGOPIAN, P. G. D.
MARTINO, J. A.
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Proceedings - IEEE International SOI Conference
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CLAEYS, C.; AOULAICHE, M.; SIMOEN. E.; GRIFFONI, A.; KOBAYASHI, D.; MAHATME, N. N.; REED. R. A.; SCHRUMPF, R. D.; AGOPIAN, P. G. D.; MARTINO, J. A. Radiation hardness aspects of advanced FinFET and UTBOX devices. Proceedings - IEEE International SOI Conference, Oct. 2012.
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The stringent requirements imposed by the ITRS rely on the introduction of alternative and/or new gate concepts and the implementation of advanced processing modules and materials[1]. During the last decade, alternative gate concepts, with an evolution from planar single gate to double gate, multi-gate FET (MugFET) or FinFET, and gate-all-around (GAA) or nanowire concepts have been extensively studied [2]. Although manufacturing issues have delayed their introduction in production lines, FinFET and MuGFET structures are presently being used for 22 nm technologies. The use of SOI devices leads to an improved radiation performance concerning single event upsets and latch-up [3], but can become worse for micro-dose effects and from a total ionizing dose point of view because of the radiation-induced interface states and trapped charge in the buried oxide [4]. © 2012 IEEE.