Non-linearity analysis of triple gate SOI nanowires MOSFETS

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dc.contributor.authorPAZ, B. C.
dc.contributor.authorRodrigo Doria
dc.contributor.authorCASSE, M.
dc.contributor.authorBARRAUD, S.
dc.contributor.authorREIMBOLD, G.
dc.contributor.authorVINET, M.
dc.contributor.authorFAYNOT, O.
dc.contributor.authorMarcelo Antonio Pavanello
dc.contributor.authorOrcidhttps://orcid.org/0000-0003-4448-4337
dc.contributor.authorOrcidhttps://orcid.org/0000-0003-1361-3650
dc.date.accessioned2022-01-12T21:58:44Z
dc.date.available2022-01-12T21:58:44Z
dc.date.issued2016-08-29
dc.description.abstract© 2016 IEEE.This work aims to explore the harmonic distortion of triple gate SOI nanowires MOSFETs, considering long channel devices operating in saturation regime as amplifiers. The Integral Function Method is used to extract the total, second and third order harmonic distortions, which are the main figures of merit analyzed in this work. Low field mobility, surface roughness scattering and series resistance are correlated to the distortion minima. Narrower devices have shown improved linearity.
dc.identifier.citationPAZ, B. C.; DORIA, R.; CASSE, M.; BARRAUD, S.; REIMBOLD, G.; VINET, M.; FAYNOT, O.; PAVANELLO, M. A. Non-linearity analysis of triple gate SOI nanowires MOSFETS. In: SIMPÓSIO DE TECNOLOGIA E DISPOSITIVOS MICROELETRÔNICOS: CHIP NA MONTANHAS, 31., 2016, Minas Gerais: SBMicro 2016 - 31º Simpósio de Tecnologia e Dispositivos Microeletrônicos: Chip nas Montanhas, localizado 29º SBCCI - Projeto de Circuitos e Sistemas, 6º WCAS - Casos de Design de IC, 1º INSCIT - Instrumentação Eletrônica e 16º SForum - Fórum de Estudantes de Graduação, 2016.
dc.identifier.doi10.1109/SBMicro.2016.7731355
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/3882
dc.relation.ispartofSBMicro 2016 - 31st Symposium on Microelectronics Technology and Devices: Chip on the Mountains, co-located 29th SBCCI - Circuits and Systems Design, 6th WCAS - IC Design Cases, 1st INSCIT - Electronic Instrumentation and 16th SForum - Undergraduate-Student Forum
dc.rightsAcesso Restrito
dc.subject.otherlanguageharmonic distortion
dc.subject.otherlanguagenon-linearity
dc.subject.otherlanguageSOI nanowires
dc.titleNon-linearity analysis of triple gate SOI nanowires MOSFETS
dc.typeArtigo de evento
fei.scopus.citations7
fei.scopus.eid2-s2.0-85007283478
fei.scopus.subjectIntegral function method
fei.scopus.subjectLong channel devices
fei.scopus.subjectLow field mobility
fei.scopus.subjectnon-linearity
fei.scopus.subjectSaturation regime
fei.scopus.subjectSeries resistances
fei.scopus.subjectSurface roughness scattering
fei.scopus.subjectThird order harmonics
fei.scopus.updated2024-12-01
fei.scopus.urlhttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85007283478&origin=inward
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