Boosting the MOSFETs matching by using diamond layout style
N/D
Tipo de produção
Artigo de evento
Data de publicação
2016-09-03
Texto completo (DOI)
Periódico
SBMicro 2016 - 31st Symposium on Microelectronics Technology and Devices: Chip on the Mountains, co-located 29th SBCCI - Circuits and Systems Design, 6th WCAS - IC Design Cases, 1st INSCIT - Electronic Instrumentation and 16th SForum - Undergraduate-Student Forum
Editor
Texto completo na Scopus
Citações na Scopus
4
Autores
PERUZZI, V. V.
RENAUX, C.
FLANDRE, D.
Salvador Gimenez
Orientadores
Resumo
© 2016 IEEE.This paper performs an experimental comparative study of the Metal-Oxide-Semiconductor Silicon-On-Insulator (SOI) Field Effect Transistors (MOSFETs) matching, which are implemented with the hexagonal gate geometry (Diamond) and classical rectangular one. Some of the main analog parameters of 360 devices are investigated. The results demonstrate that the Diamond SOI MOSFETs with α angles equal to 53.1° and 90° are capable of boosting in more than 20% the devices matching in comparison to those observed in the typical rectangular SOI MOSFETs, regarding the same gate area and bias conditions. Therefore, the Diamond layout style is an alternative technique to reduce the MOSFETs' mismatching regarding the analog SOI CMOS ICs applications.
Citação
PERUZZI, V. V. ; RENAUX, C. ; FLANDRE, D. ; GIMENEZ, S. Boosting the MOSFETs matching by using diamond layout style. SBMicro 2016 - 31st Symposium on Microelectronics Technology and Devices: Chip on the Mountains, co-located 29th SBCCI - Circuits and Systems Design, 6th WCAS - IC Design Cases, 1st INSCIT - Electronic Instrumentation and 16th SForum - Undergraduate-Student Forum, Sept. 2016.
Palavras-chave
Keywords
Devices Matching; SOI nMOSFET and analog SOI CMOS ICs
Assuntos Scopus
Analog parameters; Bias conditions; Comparative studies; Devices Matching; Gate geometry; Metal oxide semiconductor; SOI CMOS; SOI-MOSFETs