A simple electron mobility model considering the impact of silicon-dielectric interface orientation for surrounding gate devices
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2011-09-02
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PERIN, A. L.
PEREIRA, A. S. N.
AGOPIAN, P. G. D.
MARTINO, J. A.
Renato Giacomini
PEREIRA, A. S. N.
AGOPIAN, P. G. D.
MARTINO, J. A.
Renato Giacomini
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ECS Transactions
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PERIN, A. L.; PEREIRA, A. S. N.; AGOPIAN, P. G. D.;MARTINO, J. A.; GIACOMINI. R. A simple electron mobility model considering the impact of silicon-dielectric interface orientation for surrounding gate devices. ECS Transactions, v. 39, n. 1, p. 179-186, September, 2011.
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In this work, we present a simple mobility model that takes into account the variation of the carrier's mobility according to crystallographic orientations of the silicon-dielectric interface. The effective mobility of simulated devices was compared to experimental data for several interface orientations and showed good agreement. The model has been applied to a CYNTHIA nMOS transistor and allowed the observation of non-uniform current density around the silicon pillar due to electron mobility variation. ©The Electrochemical Society.