Innovative layout styles to boost the MOSFET electrical performance

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dc.contributor.authorSalvador Gimenez
dc.contributor.authorOrcidhttps://orcid.org/0000-0002-3616-9559
dc.date.accessioned2022-01-12T22:01:05Z
dc.date.available2022-01-12T22:01:05Z
dc.date.issued2014-01-05
dc.description.abstractThis paper describes how to potentiate the electrical performance of MOSFETs using non-conventional layout styles (rectangular gate geometry), without causing any extra burden to the current ICs manufacturing CMOS process. This layout approach is based on "drain-channel region-source interfaces engineering", which is capable to add new effects to the MOSFET structure that contributes to improve the analog and digital electrical parameters of MOSFETs. Besides that, some of these new structures can enhance the transistor robustness in harsh environment (high temperature and radiation). Furthermore, as a first insight into exploration of this layout approach was applied in Multi-Gate MOSFETs (FinFET) by three-dimensional simulations and the results are very promising. © 2014 The Electrochemical Society.
dc.description.firstpage121
dc.description.issuenumber1
dc.description.lastpage126
dc.description.volume60
dc.identifier.citationGIMENEZ, S. Innovative layout styles to boost the MOSFET electrical performance. ECS Transactions, v. 60, n. 1, p. 121-126, Jan. 2014.
dc.identifier.doi10.1149/06001.0121ecst
dc.identifier.issn1938-6737
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/4044
dc.relation.ispartofECS Transactions
dc.rightsAcesso Restrito
dc.titleInnovative layout styles to boost the MOSFET electrical performance
dc.typeArtigo de evento
fei.scopus.citations3
fei.scopus.eid2-s2.0-84904990965
fei.scopus.subjectCMOS processs
fei.scopus.subjectElectrical parameter
fei.scopus.subjectElectrical performance
fei.scopus.subjectGate geometry
fei.scopus.subjectHarsh environment
fei.scopus.subjectHigh temperature
fei.scopus.subjectMOSFET structures
fei.scopus.subjectThree dimensional simulations
fei.scopus.updated2024-07-01
fei.scopus.urlhttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84904990965&origin=inward
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