Analog performance of asymmetric self-cascode p-channel fully depleted SOI transistors
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9
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2012-03-17
Autores
Michelly De Souza
Marcelo Antonio Pavanello
FLANDRE, D.
Marcelo Antonio Pavanello
FLANDRE, D.
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2012 8th International Caribbean Conference on Devices, Circuits and Systems, ICCDCS 2012
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DE SOUZA, M.; PAVANELLO, M. A. ; FLANDRE, D. Analog performance of asymmetric self-cascode p-channel fully depleted SOI transistors. 2012 8th International Caribbean Conference on Devices, Circuits and Systems, ICCDCS 2012. March, 2012.
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This work presents an analysis of the analog performance of asymmetric threshold voltage self-cascode fully depleted (FD) p-type SOI transistors. The experimental results showed that this structure is able to improve the devices transconductance and output conductance, resulting in increased intrinsic voltage gain and breakdown voltage in comparison to single transistors and the conventional symmetric self-cascode. © 2012 IEEE.