Experimental comparison between pTFET and pFinFET under analog operation
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3
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2013
Autores
AGOPIAN, P. G. D.
MARTINO, J. A.
ROOYACKERS, R.
VANDOOREN, A.
SIMON, E.
CLAEYS, C.
MARTINO, J. A.
ROOYACKERS, R.
VANDOOREN, A.
SIMON, E.
CLAEYS, C.
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Periódico
ECS Transactions
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AGOPIAN, P. G. D.; MARTINO, J. A.; ROOYACKERS, R.; VANDOOREN, A.; SIMON, E.; CLAEYS, C. Experimental comparison between pTFET and pFinFET under analog operation. ECS Transactions, v. 53, n. 5, p. 155-160, Mayo, 2013.
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In this work, the analog performance of Tunnel FET and FinFET, which have a different principle of operation, is evaluated based on a comparison between them. This comparison is performed through the drain current behavior, the transconductance, the output conductance and the intrinsic voltage gain. Although the TFET devices present a smaller transconductance than the FinFET ones, the output behavior is strongly improved and results in a better performance of TFET devices when the focus is the intrinsic voltage gain. © The Electrochemical Society.