Experimental comparison between pTFET and pFinFET under analog operation
dc.contributor.author | AGOPIAN, P. G. D. | |
dc.contributor.author | MARTINO, J. A. | |
dc.contributor.author | ROOYACKERS, R. | |
dc.contributor.author | VANDOOREN, A. | |
dc.contributor.author | SIMON, E. | |
dc.contributor.author | CLAEYS, C. | |
dc.date.accessioned | 2022-01-12T22:01:20Z | |
dc.date.available | 2022-01-12T22:01:20Z | |
dc.date.issued | 2013 | |
dc.description.abstract | In this work, the analog performance of Tunnel FET and FinFET, which have a different principle of operation, is evaluated based on a comparison between them. This comparison is performed through the drain current behavior, the transconductance, the output conductance and the intrinsic voltage gain. Although the TFET devices present a smaller transconductance than the FinFET ones, the output behavior is strongly improved and results in a better performance of TFET devices when the focus is the intrinsic voltage gain. © The Electrochemical Society. | |
dc.description.firstpage | 155 | |
dc.description.issuenumber | 5 | |
dc.description.lastpage | 160 | |
dc.description.volume | 53 | |
dc.identifier.citation | AGOPIAN, P. G. D.; MARTINO, J. A.; ROOYACKERS, R.; VANDOOREN, A.; SIMON, E.; CLAEYS, C. Experimental comparison between pTFET and pFinFET under analog operation. ECS Transactions, v. 53, n. 5, p. 155-160, Mayo, 2013. | |
dc.identifier.doi | 10.1149/05305.0155ecst | |
dc.identifier.issn | 1938-5862 | |
dc.identifier.uri | https://repositorio.fei.edu.br/handle/FEI/4060 | |
dc.relation.ispartof | ECS Transactions | |
dc.rights | Acesso Restrito | |
dc.title | Experimental comparison between pTFET and pFinFET under analog operation | |
dc.type | Artigo de evento | |
fei.scopus.citations | 3 | |
fei.scopus.eid | 2-s2.0-84885667123 | |
fei.scopus.subject | Analog operations | |
fei.scopus.subject | Analog performance | |
fei.scopus.subject | Better performance | |
fei.scopus.subject | Current behaviors | |
fei.scopus.subject | Experimental comparison | |
fei.scopus.subject | Intrinsic voltage gains | |
fei.scopus.subject | Output conductance | |
fei.scopus.subject | Tunnel FET | |
fei.scopus.updated | 2025-01-01 | |
fei.scopus.url | https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84885667123&origin=inward |