Reliability analysis of gamma-and X-ray TID effects, on a commercial AlGaN/GaN based FET
Arquivos
Tipo de produção
Artigo
Data de publicação
2021-01-05
Texto completo (DOI)
Periódico
Journal of Integrated Circuits and Systems
Editor
Texto completo na Scopus
Citações na Scopus
4
Autores
BÔAS, A. C. V.
ALBERTON, S. G.
MEDINA, N. H.
AGUIAR, V. A. P.
MELO, M. A. A.
Roberto Santos
Renato Giacomini
CAVALCANTE, T. C.
VAZ, R. G.
JUNIOR E, C. F. P.
Orientadores
Resumo
© 2021, Brazilian Microelectronics Society. All rights reserved.—In this work, measurements were taken to investigate the robustness of a GaN HEMT to Total Ionizing Dose (TID) by a60gmmax values are dependable of the dose rate.DVTH values due to the TID, in this device are independent of the dose rate and the radiation source. However, the DCo Source. These results will be compared with a previous X-ray based work. Therefore, we will be, primarily, comparing both radiation sources. The robustness was investigated through IDxV curves and characteristic parameters of the irradiated device. The analysis included data acquired both from on-and off-state modes. The work concludes that the device is robust to TID, as it quickly recovered important parameters. Manly, the on-state mode, which presented a better performance compared to the off-mode. An analogous behavior was seen for X-ray. Finally, the.
Citação
BÔAS, A. C. V.; ALBERTON, S. G.; MEDINA, N. H.; AGUIAR, V. A. P.; MELO, M. A. A.; SANTOS, R.; GIACOMINI, R.; CAVALCANTE, T. C.; VAZ, R. G.; JUNIOR E, C. F. P.; SEIXAS, L. E.; FINCO, S.; GUAZZELLI, M. A. Reliability analysis of gamma-and X-ray TID effects, on a commercial AlGaN/GaN based FET. Journal of Integrated Circuits and Systems, v. 16, n. 3, 2021.
Palavras-chave
Keywords
60Co; GaN; III/V devices; radiation; TID; X-ray