Reliability analysis of gamma-and X-ray TID effects, on a commercial AlGaN/GaN based FET

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dc.contributor.authorBÔAS, A. C. V.
dc.contributor.authorALBERTON, S. G.
dc.contributor.authorMEDINA, N. H.
dc.contributor.authorAGUIAR, V. A. P.
dc.contributor.authorMELO, M. A. A.
dc.contributor.authorRoberto Santos
dc.contributor.authorRenato Giacomini
dc.contributor.authorCAVALCANTE, T. C.
dc.contributor.authorVAZ, R. G.
dc.contributor.authorJUNIOR E, C. F. P.
dc.contributor.authorSEIXAS, L. E.
dc.contributor.authorFINCO, S.
dc.contributor.authorMarcilei Aparecida Guazzelli
dc.contributor.authorOrcidhttps://orcid.org/0000-0003-4395-8078
dc.contributor.authorOrcidhttps://orcid.org/0000-0001-7110-7241
dc.contributor.authorOrcidhttps://orcid.org/0000-0003-1060-2649
dc.date.accessioned2022-06-01T06:05:31Z
dc.date.available2022-06-01T06:05:31Z
dc.date.issued2021-01-05
dc.description.abstract© 2021, Brazilian Microelectronics Society. All rights reserved.—In this work, measurements were taken to investigate the robustness of a GaN HEMT to Total Ionizing Dose (TID) by a60gmmax values are dependable of the dose rate.DVTH values due to the TID, in this device are independent of the dose rate and the radiation source. However, the DCo Source. These results will be compared with a previous X-ray based work. Therefore, we will be, primarily, comparing both radiation sources. The robustness was investigated through IDxV curves and characteristic parameters of the irradiated device. The analysis included data acquired both from on-and off-state modes. The work concludes that the device is robust to TID, as it quickly recovered important parameters. Manly, the on-state mode, which presented a better performance compared to the off-mode. An analogous behavior was seen for X-ray. Finally, the.
dc.description.issuenumber3
dc.description.volume16
dc.identifier.citationBÔAS, A. C. V.; ALBERTON, S. G.; MEDINA, N. H.; AGUIAR, V. A. P.; MELO, M. A. A.; SANTOS, R.; GIACOMINI, R.; CAVALCANTE, T. C.; VAZ, R. G.; JUNIOR E, C. F. P.; SEIXAS, L. E.; FINCO, S.; GUAZZELLI, M. A. Reliability analysis of gamma-and X-ray TID effects, on a commercial AlGaN/GaN based FET. Journal of Integrated Circuits and Systems, v. 16, n. 3, 2021.
dc.identifier.doi10.29292/jics.v16i3.566
dc.identifier.issn1872-0234
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/4510
dc.relation.ispartofJournal of Integrated Circuits and Systems
dc.rightsAcesso Aberto
dc.subject.otherlanguage60Co
dc.subject.otherlanguageGaN
dc.subject.otherlanguageIII/V devices
dc.subject.otherlanguageradiation
dc.subject.otherlanguageTID
dc.subject.otherlanguageX-ray
dc.titleReliability analysis of gamma-and X-ray TID effects, on a commercial AlGaN/GaN based FET
dc.typeArtigo
fei.scopus.citations3
fei.scopus.eid2-s2.0-85129524554
fei.scopus.updated2024-07-01
fei.scopus.urlhttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85129524554&origin=inward
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