Analysis of the low-frequency noise of junctionless nanowire transistors operating in saturation
N/D
Tipo de produção
Artigo de evento
Data de publicação
2011-10-06
Texto completo (DOI)
Periódico
Proceedings - IEEE International SOI Conference
Editor
Texto completo na Scopus
Citações na Scopus
4
Autores
Rodrigo Doria
TREVISOLI, R. D.
Michelly De Souza
COLINGE, J.P.
Marcelo Antonio Pavanello
Orientadores
Resumo
This work presented the LF noise behavior of nMOS JNTs investigated by experimental results. It was shown that JNTs can present either 1/f or 1/f 2 noises, depending on their operation region and the frequency. 1/f noise has been associated to carrier number fluctuations whereas 1/f 2 can be related to defects in the depletion layer. The W mask reduction degrades S Id at higher V GT (∼ 1 V) and present negligible influence on S Id at lower V GT (∼ 0.2 V). © 2011 IEEE.
Citação
DORIA, R.; TREVISOLI, R. D.; DE SOUZA, M. Analysis of the low-frequency noise of junctionless nanowire transistors operating in saturation. Proceedings - IEEE International SOI Conference, Oct. 2011.
Palavras-chave
Keywords
Assuntos Scopus
1/F noise; Carrier number fluctuation; Depletion layer; LF noise; Low-Frequency Noise; Nanowire transistors