Analysis of the low-frequency noise of junctionless nanowire transistors operating in saturation
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2011-10-06
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Rodrigo Doria
TREVISOLI, R. D.
Michelly De Souza
COLINGE, J.P.
Marcelo Antonio Pavanello
TREVISOLI, R. D.
Michelly De Souza
COLINGE, J.P.
Marcelo Antonio Pavanello
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Proceedings - IEEE International SOI Conference
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DORIA, R.; TREVISOLI, R. D.; DE SOUZA, M. Analysis of the low-frequency noise of junctionless nanowire transistors operating in saturation. Proceedings - IEEE International SOI Conference, Oct. 2011.
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This work presented the LF noise behavior of nMOS JNTs investigated by experimental results. It was shown that JNTs can present either 1/f or 1/f 2 noises, depending on their operation region and the frequency. 1/f noise has been associated to carrier number fluctuations whereas 1/f 2 can be related to defects in the depletion layer. The W mask reduction degrades S Id at higher V GT (∼ 1 V) and present negligible influence on S Id at lower V GT (∼ 0.2 V). © 2011 IEEE.