Analysis of the low-frequency noise of junctionless nanowire transistors operating in saturation

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dc.contributor.authorRodrigo Doria
dc.contributor.authorTREVISOLI, R. D.
dc.contributor.authorMichelly De Souza
dc.contributor.authorCOLINGE, J.P.
dc.contributor.authorMarcelo Antonio Pavanello
dc.contributor.authorOrcidhttps://orcid.org/0000-0003-1361-3650
dc.contributor.authorOrcidhttps://orcid.org/0000-0001-6472-4807
dc.contributor.authorOrcidhttps://orcid.org/0000-0003-4448-4337
dc.date.accessioned2022-01-12T22:03:02Z
dc.date.available2022-01-12T22:03:02Z
dc.date.issued2011-10-06
dc.description.abstractThis work presented the LF noise behavior of nMOS JNTs investigated by experimental results. It was shown that JNTs can present either 1/f or 1/f 2 noises, depending on their operation region and the frequency. 1/f noise has been associated to carrier number fluctuations whereas 1/f 2 can be related to defects in the depletion layer. The W mask reduction degrades S Id at higher V GT (∼ 1 V) and present negligible influence on S Id at lower V GT (∼ 0.2 V). © 2011 IEEE.
dc.identifier.citationDORIA, R.; TREVISOLI, R. D.; DE SOUZA, M. Analysis of the low-frequency noise of junctionless nanowire transistors operating in saturation. Proceedings - IEEE International SOI Conference, Oct. 2011.
dc.identifier.doi10.1109/SOI.2011.6081688
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/4176
dc.relation.ispartofProceedings - IEEE International SOI Conference
dc.rightsAcesso Restrito
dc.titleAnalysis of the low-frequency noise of junctionless nanowire transistors operating in saturation
dc.typeArtigo de evento
fei.scopus.citations4
fei.scopus.eid2-s2.0-83455206274
fei.scopus.subject1/F noise
fei.scopus.subjectCarrier number fluctuation
fei.scopus.subjectDepletion layer
fei.scopus.subjectLF noise
fei.scopus.subjectLow-Frequency Noise
fei.scopus.subjectNanowire transistors
fei.scopus.updated2025-02-01
fei.scopus.urlhttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=83455206274&origin=inward
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