Fin dimension influence on mechanical stressors in triple-gate SOI nMOSFETs
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2013-05-16
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BÜHLER, Rudolf Theoderich
SIMOEN, E.
AGOPIAN, P. G. D.
CLAEYS, C.
MARTINO, J. A.
SIMOEN, E.
AGOPIAN, P. G. D.
CLAEYS, C.
MARTINO, J. A.
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ECS Transactions
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BÜHLER, R. T.; SIMOEN, E.; AGOPIAN, P. G. D.; CLAEYS, C.; MARTINO, J. A. Fin dimension influence on mechanical stressors in triple-gate SOI nMOSFETs. ECS Transactions, v. 53, n. 5, p. 187-192, Mayo, 2013.
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This work studies the SiGe SRB and tCESL strained triple-gate SOI nMOSFETs using experimental devices and also process and device numerical simulations. The transconductance and mobility are investigated and analyzed with the strain data obtained from process simulations, including the influence of the fin dimensions on the strain. The use of SiGe SRB and tCESL strain combined resulted in higher strain and higher maximum transconductance. © The Electrochemical Society.