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Fin dimension influence on mechanical stressors in triple-gate SOI nMOSFETs

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Tipo de produção

Artigo de evento

Data de publicação

2013-05-16

Texto completo (DOI)

Periódico

ECS Transactions

Editor

Citações na Scopus

0

Autores

BÜHLER, Rudolf Theoderich
SIMOEN, E.
AGOPIAN, P. G. D.
CLAEYS, C.
MARTINO, J. A.

Orientadores

Resumo

This work studies the SiGe SRB and tCESL strained triple-gate SOI nMOSFETs using experimental devices and also process and device numerical simulations. The transconductance and mobility are investigated and analyzed with the strain data obtained from process simulations, including the influence of the fin dimensions on the strain. The use of SiGe SRB and tCESL strain combined resulted in higher strain and higher maximum transconductance. © The Electrochemical Society.

Citação

BÜHLER, R. T.; SIMOEN, E.; AGOPIAN, P. G. D.; CLAEYS, C.; MARTINO, J. A. Fin dimension influence on mechanical stressors in triple-gate SOI nMOSFETs. ECS Transactions, v. 53, n. 5, p. 187-192, Mayo, 2013.

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Keywords

Assuntos Scopus

Experimental devices; Fin dimensions; Maximum transconductance; Process simulations; SOI n-MOSFETs; Strain data; Triple-gate; Work study

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