Fin dimension influence on mechanical stressors in triple-gate SOI nMOSFETs
N/D
Tipo de produção
Artigo de evento
Data de publicação
2013-05-16
Texto completo (DOI)
Periódico
ECS Transactions
Editor
Texto completo na Scopus
Citações na Scopus
0
Autores
BÜHLER, Rudolf Theoderich
SIMOEN, E.
AGOPIAN, P. G. D.
CLAEYS, C.
MARTINO, J. A.
Orientadores
Resumo
This work studies the SiGe SRB and tCESL strained triple-gate SOI nMOSFETs using experimental devices and also process and device numerical simulations. The transconductance and mobility are investigated and analyzed with the strain data obtained from process simulations, including the influence of the fin dimensions on the strain. The use of SiGe SRB and tCESL strain combined resulted in higher strain and higher maximum transconductance. © The Electrochemical Society.
Citação
BÜHLER, R. T.; SIMOEN, E.; AGOPIAN, P. G. D.; CLAEYS, C.; MARTINO, J. A. Fin dimension influence on mechanical stressors in triple-gate SOI nMOSFETs. ECS Transactions, v. 53, n. 5, p. 187-192, Mayo, 2013.
Palavras-chave
Keywords
Assuntos Scopus
Experimental devices; Fin dimensions; Maximum transconductance; Process simulations; SOI n-MOSFETs; Strain data; Triple-gate; Work study