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Operation of double gate graded-channel transistors at low temperatures

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Tipo de produção

Artigo de evento

Data de publicação

2003-10-16

Periódico

Proceedings - Electrochemical Society

Editor

Citações na Scopus

1

Autores

Marcelo Antonio Pavanello
MARTINO, J. A.
CHUNG, T. M.
KRANTI, A.
RASKIN, J. P.
FLANDRE, D.

Orientadores

Resumo

This work studies the use of graded-channel profile on double gate SOI MOSEETs from room temperature down to 95 K with the aim of studying the analog performance. Two-dimensional simulations are performed to provide a physical explanation for the improved analog device characteristics given by the double gate graded-channel MOSFETs. It is demonstrated that double gate graded-channel MOSFETs can provide extremely improved Early voltage, high transconductance and drive current in comparison to the conventional double gate fully depleted SOI MOSFETs with similar dimensions. A degradation in the Early voltage as the temperature decreases has been found but this reduction reflects negligibly in the low frequency open loop gain for a temperature range of 150 K to 300 K due compensation provided by the transconductance to drain current ratio.

Citação

PAVANELLO, M. A.; MARTINO, J. A.; CHUNG, T. M.; KRANTI, A.; RASKIN, J. P.; FLANDRE, D. Operation of double gate graded-channel transistors at low temperatures. Proceedings - Electrochemical Society, v. 27, p. 50-60, oct. 2003.

Palavras-chave

Keywords

Assuntos Scopus

Channel regions; Double gate (DG); Drain currents; Graded-channels

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