Operation of double gate graded-channel transistors at low temperatures

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dc.contributor.advisorOrcidhttps://orcid.org/0000-0003-1361-3650
dc.contributor.authorMarcelo Antonio Pavanello
dc.contributor.authorMARTINO, J. A.
dc.contributor.authorCHUNG, T. M.
dc.contributor.authorKRANTI, A.
dc.contributor.authorRASKIN, J. P.
dc.contributor.authorFLANDRE, D.
dc.date.accessioned2023-08-26T23:50:59Z
dc.date.available2023-08-26T23:50:59Z
dc.date.issued2003-10-16
dc.description.abstractThis work studies the use of graded-channel profile on double gate SOI MOSEETs from room temperature down to 95 K with the aim of studying the analog performance. Two-dimensional simulations are performed to provide a physical explanation for the improved analog device characteristics given by the double gate graded-channel MOSFETs. It is demonstrated that double gate graded-channel MOSFETs can provide extremely improved Early voltage, high transconductance and drive current in comparison to the conventional double gate fully depleted SOI MOSFETs with similar dimensions. A degradation in the Early voltage as the temperature decreases has been found but this reduction reflects negligibly in the low frequency open loop gain for a temperature range of 150 K to 300 K due compensation provided by the transconductance to drain current ratio.
dc.description.firstpage50
dc.description.lastpage60
dc.description.volume27
dc.identifier.citationPAVANELLO, M. A.; MARTINO, J. A.; CHUNG, T. M.; KRANTI, A.; RASKIN, J. P.; FLANDRE, D. Operation of double gate graded-channel transistors at low temperatures. Proceedings - Electrochemical Society, v. 27, p. 50-60, oct. 2003.
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/5070
dc.relation.ispartofProceedings - Electrochemical Society
dc.rightsAcesso Restrito
dc.titleOperation of double gate graded-channel transistors at low temperatures
dc.typeArtigo de evento
fei.scopus.citations1
fei.scopus.eid2-s2.0-21644477030
fei.scopus.subjectChannel regions
fei.scopus.subjectDouble gate (DG)
fei.scopus.subjectDrain currents
fei.scopus.subjectGraded-channels
fei.scopus.updated2024-11-01
fei.scopus.urlhttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=21644477030&origin=inward
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