Study of the linear kink effect in PD SOI nMOSFETs
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9
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Artigo
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2007-01-05
Autores
AGOPIAN, P. G. D.
MARTINO, J. A.
SIMOEN, E.
CLAEYS, C.
MARTINO, J. A.
SIMOEN, E.
CLAEYS, C.
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Periódico
Microelectronics Journal
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AGOPIAN, P. G. D.; MARTINO, J. A.; SIMOEN, E.; CLAEYS, C. Study of the linear kink effect in PD SOI nMOSFETs. Microelectronics Journal, v. 38, n. 1, p. 114-119, Jan. 2007.
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We present in this work a study of the linear kink effect (LKE) occurrence in partially depleted (PD) SOI nMOSFETs with thin gate oxide. The experimental LKE dependence on the channel length, channel width and drain voltage are reported as well as the impact of various parameters on the second peak has been studied by two-dimensional numerical simulations, namely, the gate current level, the carrier lifetime, the increase of the body potential, the threshold voltage variation and AC analysis. Three-dimensional simulations were also performed in order to evaluate the LKE dependence on the channel width. © 2006 Elsevier Ltd. All rights reserved.