A proposal to study long-lived isotopes produced by thermal neutron irradiation of digital devices

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dc.contributor.authorZAHN, G S
dc.contributor.authorGENEZINI, F A
dc.contributor.authorMORALLES, M
dc.contributor.authorSIQUEIRA, P T D
dc.contributor.authorMEDINA, N H
dc.contributor.authorAGUIAR, V A P
dc.contributor.authorMACCHIONE, E L A
dc.contributor.authorADDED, N
dc.contributor.authorGUAZZELLI, Marcilei Aparecida
dc.contributor.authorOrcidhttps://orcid.org/0000-0001-7110-7241pt_BR
dc.date.accessioned2021-06-22T15:32:57Z
dc.date.available2021-06-22T15:32:57Z
dc.date.issued2019
dc.description.abstractIn this work, we present a facility to study errors in digital devices exposed to thermal neutrons from a beam hole in the IEA-R1 nuclear reactor, as well as the long-lived isotopes produced in the irradiation of digital electronic devices under a slow neutron field. Preliminary results obtained with the analysis of a 28nm SRAM-based Xilinx Zynq-7000 FPGA are presented.en
dc.description.firstpage012020
dc.description.firstpage1
dc.description.lastpage3
dc.description.volume1291
dc.format.extent3pt_BR
dc.identifier.citationZAHN, G S; GENEZINI, F A; MORALLES, M; SIQUEIRA, P T D; MEDINA, N H; AGUIAR, V A P; MACCHIONE, E L A; ADDED, N; GUAZZELLI, M. A. Aparecida. A proposal to study long-lived isotopes produced by thermal neutron irradiation of digital devices. JOURNAL OF PHYSICS: CONFERENCE SERIES, v. 1291, p. 012020, 2019.pt_BR
dc.identifier.doi10.1088/1742-6596/1291/1/012020pt_BR
dc.identifier.issn1742-6588
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/3237
dc.language.isoenpt_BR
dc.relation.ispartofJOURNAL OF PHYSICS. CONFERENCE SERIES (PRINT)
dc.rightsAcesso Aberto
dc.rights.licenseCreative Commons "Este é um artigo publicado em acesso aberto sob uma licença Creative Commons (CC BY 3.0). Fonte: https://publishingsupport.iopscience.iop.org/licence-policy-for-articles-published-on-a-gold-open-access-basis/. Acesso em: 22 jun 2021
dc.titleA proposal to study long-lived isotopes produced by thermal neutron irradiation of digital devicespt_BR
dc.typeArtigopt_BR
fei.scopus.citations0
fei.scopus.eid2-s2.0-85072098166
fei.scopus.updated2024-03-04
fei.source.urlhttps://doi.org/10.1088/1742-6596/1291/1/012020
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