Early voltage behavior in circular gate SOI nMOSFET using 0.13 μm partially-depleted SOI CMOS technology

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dc.contributor.authorSalvador Gimenez
dc.contributor.authorFERREIRA, R. M. G.
dc.contributor.authorJoao Antonio Martino
dc.contributor.authorOrcidhttps://orcid.org/0000-0002-3616-9559
dc.contributor.authorOrcidhttps://orcid.org/0000-0001-8121-6513
dc.date.accessioned2023-08-26T23:50:28Z
dc.date.available2023-08-26T23:50:28Z
dc.date.issued2006-09-01
dc.description.abstractThis paper studies the Early voltage behavior in circular gate partially-depleted SOI nMOSFET. The drain/source asymmetric effects are considered in terms of drain current as a function of the gate and drain voltages. Drain current comparisons with rectangular gate partially-depleted SOI nMOSFET are performed, regarding the same effective channel length and width. Experimental results and three-dimensional simulations are used to qualify the results. © 2006 The Electrochemical Society.
dc.description.firstpage309
dc.description.issuenumber1
dc.description.lastpage318
dc.description.volume4
dc.identifier.citationGIMENEZ, S.; FERREIRA, R. M. G.; MARTINO. J. A. Early voltage behavior in circular gate SOI nMOSFET using 0.13 μm partially-depleted SOI CMOS technology. ECS Transactions, v. 4, n. 1, p. 309-318, sept. 2006.
dc.identifier.issn1938-6737
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/5037
dc.relation.ispartofECS Transactions
dc.rightsAcesso Restrito
dc.titleEarly voltage behavior in circular gate SOI nMOSFET using 0.13 μm partially-depleted SOI CMOS technology
dc.typeArtigo de evento
fei.scopus.citations8
fei.scopus.eid2-s2.0-33847632838
fei.scopus.subjectAsymmetric effects
fei.scopus.subjectDrain voltages
fei.scopus.subjectEarly voltage behavior
fei.scopus.subjectThree dimensional simulations
fei.scopus.updated2024-07-01
fei.scopus.urlhttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=33847632838&origin=inward
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