Non-vertical sidewall angle influence on triple-gate FinFETs corner effects

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dc.contributor.advisorOrcidhttps://orcid.org/0000-0003-1060-2649
dc.contributor.authorRenato Giacomini
dc.contributor.authorMARTINO J. A.
dc.date.accessioned2022-01-12T22:05:17Z
dc.date.available2022-01-12T22:05:17Z
dc.date.issued2007-05-11
dc.description.abstractSome fabricated FinFET devices present width variations along the vertical direction due to fabrication process limitations. These variations lead to non-rectangular cross-section shapes. One of the most frequent shapes is the trapezoidal (plane and inclined sidewalls). Another identified phenomenon in multiple-gate devices such as FinFETs is the corner effect, which occurs due to the overlapping of the influences of two gate planes near the device corners. This paper addresses the variation of the corner effect as a function of the sidewall inclination angle, through 3-D numeric simulation. A set of devices of several inclination angles and body doping levels were simulated. The corner effect depends on the inclination angle, specially for higher doping levels. © The Electrochemical Society.
dc.description.firstpage381
dc.description.issuenumber4
dc.description.lastpage386
dc.description.volume6
dc.identifier.citationGIACOMINI. R.; MARTINO J. A. Non-vertical sidewall angle influence on triple-gate FinFETs corner effects. ECS Transactions, v. 6, n. 4, p. 381-386, Mayo, 2007.
dc.identifier.doi10.1149/1.2728886
dc.identifier.issn1938-5862
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/4328
dc.relation.ispartofECS Transactions
dc.rightsAcesso Restrito
dc.titleNon-vertical sidewall angle influence on triple-gate FinFETs corner effects
dc.typeArtigo de evento
fei.scopus.citations2
fei.scopus.eid2-s2.0-45249111177
fei.scopus.subjectbody doping
fei.scopus.subjectCorner effects
fei.scopus.subjectDoping levels
fei.scopus.subjectElectrochemical Society (ECS)
fei.scopus.subjectFabrication processes
fei.scopus.subjectFinFET devices
fei.scopus.subjectFinFETs
fei.scopus.subjectinclination angles
fei.scopus.subjectInternational symposium
fei.scopus.subjectmultiple gate
fei.scopus.subjectnumeric simulation
fei.scopus.subjectpaper addresses
fei.scopus.subjectRectangular cross sections
fei.scopus.subjectSidewall angles
fei.scopus.subjectSilicon on insulator (SOI) technology
fei.scopus.subjectTriple Gate
fei.scopus.subjectVertical directions
fei.scopus.updated2024-07-01
fei.scopus.urlhttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=45249111177&origin=inward
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