Implementation of high performance operational transconductance amplifiers using graded-channel SOI nMOSFETs

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dc.contributor.authorSalvador Gimenez
dc.contributor.authorMarcelo Antonio Pavanello
dc.contributor.authorJoao Antonio Martino
dc.contributor.authorFLANDRE, D.
dc.contributor.authorOrcidhttps://orcid.org/0000-0002-3616-9559
dc.contributor.authorOrcidhttps://orcid.org/0000-0003-1361-3650
dc.contributor.authorOrcidhttps://orcid.org/0000-0001-8121-6513
dc.date.accessioned2023-08-26T23:50:36Z
dc.date.available2023-08-26T23:50:36Z
dc.date.issued2005-05-20
dc.description.abstractThis paper presents the performance of operational transconductance amplifiers (OTAs) fabricated with Graded-Channel (GC) SOI nMOSFETs at room temperature. Different design targets were taken in account such as similar power dissipation, transconductance over drain current ratio and die area. Comparisons with high voltage gain and high unit voltage gain frequency OTAs made with conventional SOI nMOSFETs are performed showing that the GC OTAs present larger open-loop voltage gain without degrading unit voltage gain frequency, the phase margin, and slew rate with a significant required die area reduction depending on used LLD/L ratio. Experimental results and SPICE simulations are used to validate the analysis.
dc.description.firstpage69
dc.description.lastpage74
dc.description.volumePV 2005-03
dc.identifier.citationGIMENEZ, S.; PAVANELLO, M. A.; MARTINO, J. A.; FLANDRE, D. Implementation of high performance operational transconductance amplifiers using graded-channel SOI nMOSFETs. Proceedings - Electrochemical Society, v. PV 2005-03, p. 69-74, mayo, 2005.
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/5046
dc.relation.ispartofProceedings - Electrochemical Society
dc.rightsAcesso Restrito
dc.titleImplementation of high performance operational transconductance amplifiers using graded-channel SOI nMOSFETs
dc.typeArtigo de evento
fei.scopus.citations0
fei.scopus.eid2-s2.0-31844448633
fei.scopus.subjectPhase margins
fei.scopus.subjectVoltage gain frequency
fei.scopus.updated2024-07-01
fei.scopus.urlhttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=31844448633&origin=inward
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