Single event effect: Simulations and analysis on 3N163 PMOS transistor
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2018-03-18
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OLIVEIRA, J.
Marcilei Aparecida Guazzelli
ASSIS, M. A.
Renato Giacomini
Marcilei Aparecida Guazzelli
ASSIS, M. A.
Renato Giacomini
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2018 IEEE 19th Latin-American Test Symposium, LATS 2018
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OLIVEIRA, J.; GUAZZELLI, M. A.; ASSIS, M. A.; GIACOMINI, R. Single event effect: Simulations and analysis on 3N163 PMOS transistor. 2018 IEEE 19th Latin-American Test Symposium, LATS 2018, p. 1-3, Aug. 2018.
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© 2018 IEEE.This work addresses the simulation of a commercial p-channel MOSFET (3N163) using Sentaurus TCAD tool to observe the behavior of this device operating under heavy-ion environment, in order to study Single Event Effect (SEE) mechanisms and its effects. The simulated results were used to understand experimental data collected on field and make a comparison between real and simulated data. It also allowed interpretation of experimental data, as well as elimination of spurious noises and artifacts, which are not related to SEE effects, but are imposed by environment and experimental facilities.