Static and dynamic compact analytical model for junctionless nanowire transistors

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dc.contributor.advisorOrcidhttps://orcid.org/0000-0003-4448-4337
dc.contributor.authorMarcelo Antonio Pavanello
dc.contributor.authorTREVISOLI, R.
dc.contributor.authorRodrigo Doria
dc.contributor.authorMichelly De Souza
dc.contributor.authorOrcidhttps://orcid.org/0000-0003-1361-3650
dc.contributor.authorOrcidhttps://orcid.org/0000-0001-6472-4807
dc.date.accessioned2022-01-12T21:57:17Z
dc.date.available2022-01-12T21:57:17Z
dc.date.issued2018-07-25
dc.description.abstractThis paper presents a compact analytical model for the static and dynamic electrical characteristics of Junctionless Nanowire Transistors. The static drain current model formulation is derived from the 2D solution of the Poisson equation with appropriate boundary conditions and long-channel devices, leading to a continuous effective surface potential that accounts for the conduction in partial depletion and accumulation regimes. The long-channel model is modified to account for short-channel effects by using the coupled solution of 3D Laplace equation with the 2D Poisson equation. The substrate bias influence on the drain current is also included in the model formulation. The charges at the device terminals are differentiated with respect to the applied biases leading to an analytical description of the transconductances and transcapacitances. The proposed model is validated using experimental data at different bias conditions and temperatures, showing very good agreement.
dc.description.issuenumber33
dc.description.volume30
dc.identifier.citationPAVANELLO, M. A.; TREVISOLI, R.; DORIA, R.; DE SOUZA, M. Static and dynamic compact analytical model for junctionless nanowire transistors. Journal of Physics Condensed Matter, v.30, n. 33, 2018.
dc.identifier.doi10.1088/1361-648X/aad34f
dc.identifier.issn0953-8984
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/3782
dc.relation.ispartofJournal of Physics Condensed Matter
dc.rightsAcesso Restrito
dc.subject.otherlanguagecompact analytical model
dc.subject.otherlanguagedynamic model
dc.subject.otherlanguagejunctionless nanowire transistors
dc.subject.otherlanguageshort channel effects
dc.subject.otherlanguagetemperature dependence
dc.titleStatic and dynamic compact analytical model for junctionless nanowire transistors
dc.typeArtigo
fei.scopus.citations4
fei.scopus.eid2-s2.0-85051414235
fei.scopus.subjectAnalytical description
fei.scopus.subjectElectrical characteristic
fei.scopus.subjectLong channel devices
fei.scopus.subjectModel formulation
fei.scopus.subjectNanowire transistors
fei.scopus.subjectPartial depletion
fei.scopus.subjectShort-channel effect
fei.scopus.subjectTemperature dependence
fei.scopus.updated2023-02-01
fei.scopus.urlhttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85051414235&origin=inward
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