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Zero temperature coefficient behavior for ellipsoidal mosfet

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dc.contributor.authorBRAGA DE LIMA, M. P.
dc.contributor.authorCAMILO, L. M.
dc.contributor.authorPEIXOTO, M. A. P.
dc.contributor.authorCORREIA, M. M.
dc.contributor.authorSalvador Gimenez
dc.contributor.authorOrcidhttps://orcid.org/0000-0002-3616-9559
dc.date.accessioned2022-01-12T21:55:43Z
dc.date.available2022-01-12T21:55:43Z
dc.date.issued2020-01-05
dc.description.abstract© 2020, Brazilian Microelectronics Society. All rights reserved.The zero temperature coefficient (ZTC) is investi-gated by three-dimensional numerical simulations in the Metal-Oxide-Semiconductor (MOS) Field Effect Transistor (MOSFET) with the ellipsoidal (EM) and conventional rectan-gular gate geometries (CM), considering the same channel widths (W), gate areas (AG) and bias condition (BC). In this work an improved simple model which predicts the ZTC point taking into account only the mobility degradation factor (c) and threshold voltage (Vth) parameters as function of temperature is proposed in the linear and saturation operation regions. The analysis takes into account the temperature variations of the threshold voltage and the mobility degradation factor. Alt-hough simple, the model predictions present a good agreement with the numerical simulations results.
dc.description.firstpage1
dc.description.issuenumber2
dc.description.lastpage5
dc.description.volume15
dc.identifier.citationBRAGA DE LIMA, M. P.; CAMILO, L. M. ; PEIXOTO, M. A. P.; CORREIA, M. M.; GIMENEZ, S. Zero temperature coefficient behavior for ellipsoidal mosfet. Journal of Integrated Circuits and Systems, v. 15, n. 2, p. 1-5, Jan. 2020.
dc.identifier.doi10.29292/jics.v15i2.166
dc.identifier.issn1872-0234
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/3677
dc.relation.ispartofJournal of Integrated Circuits and Systems
dc.rightsAcesso Aberto
dc.rights.licenseOpen Journal Systems "Este é um artigo publicado em acesso aberto sob uma licença de código aberto (GPL v2). Fonte: https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85090604382&origin=inward. Acesso em 30 maio 2022.
dc.subject.otherlanguageEllipsoidal layout style
dc.subject.otherlanguageMobility degradation
dc.subject.otherlanguageSimple model
dc.subject.otherlanguageZero temperature coefficient
dc.titleZero temperature coefficient behavior for ellipsoidal mosfet
dc.typeArtigo
fei.scopus.citations3
fei.scopus.eid2-s2.0-85090604382
fei.scopus.updated2024-11-01
fei.scopus.urlhttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85090604382&origin=inward

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