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On-resistance and harmonic distortion in graded-channel SOI FD MOSFET

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Tipo de produção

Artigo de evento

Data de publicação

2004-11-05

Periódico

Proceedings of the IEEE International Caracas Conference on Devices, Circuits and Systems, ICCDCS

Editor

Citações na Scopus

1

Autores

CERDEIRA, A.
ALEMAN, M. A.
Marcelo Antonio Pavanello
MARTINO, J. A.
VANCAILLIE, L.
FLANDRE, D.

Orientadores

Resumo

In this paper we analyze the advantages of asymmetric channel engineering on the MOS resistance behavior in quasi-linear operation, such as used in integrated continuous-time tunable filters. The study of the two major figures of merit in such applications, i.e. on-resistance and non-linear harmonic distortion, is supported by measurements on conventional and Graded-Channel (GC) fully depleted (FD) SOI MOSFETs. The quasi linear I-V characteristics of GC transistors demonstrate a decrease of the on-resistance as the length of the low doped region into the channel is augmented and an improvement of the third order harmonic distortion (HD3), when compared with conventional transistors. A full comparison method between conventional and GC SOI MOSFETs is presented considering HD3 evolution with on-resistance tuning under low voltage of operation, demonstrating the significant advantages of the asymmetrical long channel transistors. © 2004 IEEE.

Citação

CERDEIRA, A.; ALEMAN, M. A.; PAVANELLO, M. A.; MARTINO, J. A.; VANCAILLIE, L.; FLANDRE, D. On-resistance and harmonic distortion in graded-channel SOI FD MOSFET. Proceedings of the IEEE International Caracas Conference on Devices, Circuits and Systems, ICCDCS, p. 118-121, nov. 2004.

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Keywords

Assuntos Scopus

Conventional transistors; On-resistance tuning; Quasi-linear operation; Tunable filters

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