Charge deposition analysis of heavy-ion-induced single-event burnout in low-voltage power VDMOSFET

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2
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Artigo
Data
2022-10-05
Autores
ALBERTON, S. G.
AGUIAR, V. A. P.
MEDINA, N. H.
ADDED, N.
MACCHIONE, E. L. A.
MENEGASSO, R.
CESARIO. G. J.
SANTOS, H. C.
SCARDUELLI, V. B.
ALCANTARA-NUNEZ, J. A.
Marcilei Aparecida Guazzelli
Roberto Santos
FLECHAS, D.
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Periódico
Microelectronics Reliability
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Citação
ALBERTON, S. G. ALBERTON, S. G.; AGUIAR, V. A. P.; MEDINA, N. H.; ADDED, N.; MACCHIONE, E. L. A.; MENEGASSO, R.; CESARIO. G. J.;SANTOS, H. C.; SCARDUELLI, V. B.; ALCANTARA-NUNEZ, J. A.; GUAZZELLI, M. A.; SANTOS, R.; FLECHAS, D. Charge deposition analysis of heavy-ion-induced single-event burnout in low-voltage power VDMOSFET. Microelectronics Reliability, v. 137, Oct. 2022.
Texto completo (DOI)
10.1016/j.microrel.2022.114784
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https://repositorio.fei.edu.br/handle/FEI/4589
Resumo
© 2022 Elsevier LtdThe heavy-ion-induced single-event burnout (SEB) risk in power MOSFETs (metal-oxide-semiconductor field-effect transistors) can be assessed in ground facilities, although it is costly and time-demanding. For this reason, there have been few experimental studies dedicated to investigate the relevant parameter related to the description of ion-induced SEB phenomenon. In this work the heavy-ion-induced SEB in a low-voltage power VDMOSFET (vertical double-diffused MOSFET) is studied using several ion-energy combinations. A self-consistent statistical analysis is carried out in order to elucidate the relationship between charge deposition and SEB triggering. Experimental data is compared to a predictive model from the literature for SEE (single-event effect) worst-case prediction in power MOSFETs, supporting for the first time its relevance to the worst-case prediction in the SEB mechanism.

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