Analysis of the linear kink effect in partially depleted SOI nMOSFET's
N/D
Tipo de produção
Artigo de evento
Data de publicação
2005-09-07
Periódico
Proceedings - Electrochemical Society
Editor
Texto completo na Scopus
Citações na Scopus
1
Autores
AGOPIAN, P. G.
MARTINO, J. A.
SIMOEN, E.
CLAEYS, C.
Orientadores
Resumo
In this work, the occurrence of the linear kink effect (LKE) in PD SOI nMOSFETs is investigated experimentally and by two-dimensional simulations. The experimental dependence of the LKE on the drain voltage and the channel length is reported, showing a reduction of the second peak in the transconductance when the transistor channel length decrease. By two-dimensional numerical simulations, the impact of various parameters on this second peak has been studied, namely, the gate current level, the carrier lifetime, the increase of the body potential and the threshold voltage variation.
Citação
AGOPIAN, P. G.; MARTINO, J. A.; SIMOEN, E.; CLAEYS, C. Analysis of the linear kink effect in partially depleted SOI nMOSFET's. Proceedings - Electrochemical Society, v. PV 2005-08, p. 512-519, sept. 2005.
Palavras-chave
Keywords
Assuntos Scopus
Body potential; Drain voltage; Linear kink effect