NBTI Dependence on Temperature in Junctionless Nanowire Transistors

dc.contributor.authorGRAZIANO, N.
dc.contributor.authorTREVISOLI, R.
dc.contributor.authorRodrigo, Doria
dc.contributor.authorOrcidhttps://orcid.org/0000-0003-4448-4337
dc.date.accessioned2022-06-01T06:05:33Z
dc.date.available2022-06-01T06:05:33Z
dc.date.issued2021-07-27
dc.description.abstract©2021 IEEE.This paper discusses the nature of degradation by NBTI effect in pMOS junctionless devices when varying the temperature. The results were obtained through simulations validated to experimental data. Devices with different dimensions and doping, have been subjected to a temperature range that varies between 270 and 380 K. The simulations were performed for different values of VGT and as a result it is possible to observe that when increasing temperature up to 340 K, the threshold voltage variation due to NBTI is also increased. However, for larger temperatures the NBTI effect seems to stabilize or even reduce.
dc.identifier.doi10.1109/SBMicro50945.2021.9585764
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/4511
dc.relation.ispartofSBMicro 2021 - 35th Symposium on Microelectronics Technology and Devices
dc.rightsAcesso Restrito
dc.subject.otherlanguageJunctionless nanowire transistor
dc.subject.otherlanguageNbti
dc.subject.otherlanguageTemperature
dc.titleNBTI Dependence on Temperature in Junctionless Nanowire Transistors
dc.typeArtigo de evento
fei.scopus.citations1
fei.scopus.eid2-s2.0-85126124052
fei.scopus.subjectIncreasing temperatures
fei.scopus.subjectJunctionless devices
fei.scopus.subjectJunctionless nanowire transistor
fei.scopus.subjectNanowire transistors
fei.scopus.subjectNbti
fei.scopus.subjectTemperature range
fei.scopus.subjectThreshold voltage variation
fei.scopus.updated2024-02-01
fei.scopus.urlhttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85126124052&origin=inward
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