Comparative study of the proton beam effects between the conventional and Circular-Gate MOSFETs

dc.contributor.authorCirne K.
dc.contributor.authorSilveira M.A.G.
dc.contributor.authorSantos R.B.B.
dc.contributor.authorGimenez S.P.
dc.contributor.authorBarbosa M.D.L.
dc.contributor.authorTabacniks M.H.
dc.contributor.authorAdded N.
dc.contributor.authorMedina N.H.
dc.contributor.authorDe Melo W.R.
dc.contributor.authorSeixas Jr. L.E.
dc.contributor.authorDe Lima J.A.
dc.date.accessioned2019-08-19T23:47:18Z
dc.date.available2019-08-19T23:47:18Z
dc.date.issued2012
dc.description.abstractThe study of ionizing radiation effects on semiconductor devices is of great relevance for the global technological development and is a necessity in some strategic areas in Brazil. This work presents preliminary results of radiation effects in MOSFETs that were exposed to 3.2 Grad radiation dose produced by a 2.6-MeV proton beam. The focus of this work was to electrically characterize a Rectangular-Gate MOSFET (RGT) and a Circular-Gate MOSFET (CGT), manufactured with the On Semiconductor 0.5 μm standard CMOS fabrication process and to verify a suitable geometry for space applications. During the experiment, I DS × V GS curves were measured. After irradiation, the RGT off-state current (I OFF) increased approximately two orders of magnitude reaching practically the same value of the I OFF in the CGT, which only doubled its value. © 2011 Elsevier B.V. All rights reserved.
dc.description.firstpage80
dc.description.lastpage82
dc.description.volume273
dc.identifier.citationCirne, K.; Seixas, L.E.; de Lima, J.A.; Silveira, M.A.G.; Santos, R.B.B.; Gimenez, S.P.; Barbosa, M.D.L.; Tabacniks, M.H.; ADDED, N.; Medina, N.H.; De Melo, W.R.. Comparative study of the proton beam effects between the conventional and Circular-Gate MOSFETs. Nuclear Instruments & Methods in Physics Research. Section B, Beam Interactions with Materials and Atoms (Print), v. 273, p. 80-82, 2012.
dc.identifier.doi10.1016/j.nimb.2011.07.044
dc.identifier.issn0168-583X
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/1448
dc.relation.ispartofNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
dc.rightsAcesso Restrito
dc.subject.otherlanguageCircular-Gate MOSFET
dc.subject.otherlanguageExternal proton beam
dc.subject.otherlanguageIntegrated circuits
dc.subject.otherlanguageRadiation effects
dc.subject.otherlanguageRadiation hardening
dc.subject.otherlanguageRectangular-Gate MOSFET
dc.subject.otherlanguageTotal Ionizing Dose (TID)
dc.titleComparative study of the proton beam effects between the conventional and Circular-Gate MOSFETs
dc.typeArtigo de evento
fei.scopus.citations3
fei.scopus.eid2-s2.0-84856086420
fei.scopus.subjectComparative studies
fei.scopus.subjectMOS-FET
fei.scopus.subjectMOSFETs
fei.scopus.subjectOff-state current
fei.scopus.subjectOrders of magnitude
fei.scopus.subjectRadiation dose
fei.scopus.subjectStandard CMOS
fei.scopus.subjectTechnological development
fei.scopus.subjectTotal ionizing dose
fei.scopus.updated2024-05-01
fei.scopus.urlhttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84856086420&origin=inward
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