The roles of the gate bias, doping concentration, temperature and geometry on the harmonic distortion of junctionless nanowire transistors operating in the linear regime
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2014-05-05
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Rodrigo Doria
TREVISOLI, R.
Michelly De Souza
ESTRADA, M.
CERDEIRA, A.
Marcelo Antonio Pavanello
TREVISOLI, R.
Michelly De Souza
ESTRADA, M.
CERDEIRA, A.
Marcelo Antonio Pavanello
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Journal of Integrated Circuits and Systems
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DORIA, R.; TREVISOLI, R.; DE SOUZA, M.; ESTRADA, M.; CERDEIRA, A.; PAVANELLO, M. A. The roles of the gate bias, doping concentration, temperature and geometry on the harmonic distortion of junctionless nanowire transistors operating in the linear regime. Journal of Integrated Circuits and Systems, v. 9, n. 2, p. 110-117, 2014.
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© 2014, Journal of Integrated Circuits and Systems 2014. All rights received.The linearity of Junctionless nanowire transistors operating in the linear regime has been evaluated through experimental data and numerical simulations. The influences of the fin width, the gate bias, the temperature, the doping concentration and the geometry on the overall linearity have been evaluated. The increase of the series resistance associated both to the variation of the physical parameters and the incomplete ionization effect has shown to improve the second order distortion and degrade the third order one.