Evaluation of triple-gate FinFETs with SiO2-HfO2-TiN gate stack under analog operation

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dc.contributor.authorPavanello M.A.
dc.contributor.authorMartino J.A.
dc.contributor.authorSimoen E.
dc.contributor.authorRooyackers R.
dc.contributor.authorCollaert N.
dc.contributor.authorClaeys C.
dc.date.accessioned2019-08-19T23:45:08Z
dc.date.available2019-08-19T23:45:08Z
dc.date.issued2007
dc.description.abstractThis work presents the analog performance of nMOS triple-gate FinFETs with high-κ dielectrics, TiN gate material and undoped body from DC measurements. Different fin widths and devices with and without halo implantation are explored. No halo FinFETs can achieve extremely large gain and improved unity gain frequency at similar channel length than halo counterparts. The FinFETs with 110 nm long channel achieve an intrinsic gain of 25 dB. Extremely large Early voltages have been measured on long channel nMOS with no halo and relatively wide fins compared to the results usually reported in the literature. The large Early voltage obtained suggests that the devices operate in the onset of volume inversion due to the low doping level of the device body. © 2007 Elsevier Ltd. All rights reserved.
dc.description.firstpage285
dc.description.issuenumber2
dc.description.lastpage291
dc.description.volume51
dc.identifier.citationPAVANELLO, Marcelo A.; MARTINO, João Antonio; SIMOEN, Eddy; ROOYACKERS, Rita; COLLAERT, Nadine; CLAEYS, Cor. Evaluation of triple-gate FinFETs with SiO2-HfO2-TiN gate stack under analog operation. Solid-State Electronics, v. 51, n. 2, p. 285-291, 2007.
dc.identifier.doi10.1016/j.sse.2007.01.012
dc.identifier.issn0038-1101
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/1067
dc.relation.ispartofSolid-State Electronics
dc.rightsAcesso Restrito
dc.subject.otherlanguageAnalog operation
dc.subject.otherlanguageEarly voltage
dc.subject.otherlanguageFinFET
dc.subject.otherlanguageIntrinsic gain
dc.subject.otherlanguageTriple-gate
dc.subject.otherlanguageVolume inversion
dc.titleEvaluation of triple-gate FinFETs with SiO2-HfO2-TiN gate stack under analog operation
dc.typeArtigo
fei.scopus.citations41
fei.scopus.eid2-s2.0-33847369474
fei.scopus.subjectAnalog operation
fei.scopus.subjectEarly voltage
fei.scopus.subjectIntrinsic gain
fei.scopus.subjectVolume inversion
fei.scopus.updated2024-03-04
fei.scopus.urlhttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=33847369474&origin=inward
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