Biaxial stress simulation and electrical characterization of triple-gate SOI nMOSFETs
N/D
Tipo de produção
Artigo de evento
Data de publicação
2012-09-02
Texto completo (DOI)
Periódico
ECS Transactions
Editor
Texto completo na Scopus
Citações na Scopus
3
Autores
BÜHLER, Rudolf Theoderich
AGOPIAN, P. G. D.
SIMOEN. E.
CLAEYS, C.
MARTINO, J. A.
Orientadores
Resumo
In this work we study unstrained and biaxially strained triple-gate SOI nMOSFETs by process and device numerical simulations and by electrical characterization. Emphasis is given to the total resistance and transconductance in devices with and without SEG (selective epitaxial growth) and variable fin dimensions. The influence of the fin dimensions on the stress effectiveness is analyzed through 3D process simulations, while the total resistance and transconductance are analyzed through dc measurements. The use of biaxial stress combined with the SEG technique resulted in an lower total resistance and a higher maximum transconductance. © The Electrochemical Society.
Citação
BÜHLER, R. T.; AGOPIAN, P. G. D.; SIMOEN. E.; CLAEYS, C.; MARTINO, J. A. Biaxial stress simulation and electrical characterization of triple-gate SOI nMOSFETs. ECS Transactions, v. 49, n. 1, p. 145-152, Sept. 2012.
Palavras-chave
Keywords
Assuntos Scopus
Biaxial stress; Dc measurements; Electrical characterization; Fin dimensions; Maximum transconductance; Selective epitaxial growth; SOI n-MOSFETs; Total resistance