Parasitic conduction response to X-ray radiation in unstrained and strained triple-gate SOI MuGFETs
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2014-05-05
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TEIXEIRA, F. F.
BORDALLO, C. C. M.
Marcilei Aparecida Guazzelli
AGOPIAN, P. G. D.
MARTINO, J. A.
SIMOEN, E.
CLAEYS, C.
BORDALLO, C. C. M.
Marcilei Aparecida Guazzelli
AGOPIAN, P. G. D.
MARTINO, J. A.
SIMOEN, E.
CLAEYS, C.
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Journal of Integrated Circuits and Systems
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TEIXEIRA, F. F.; BORDALLO, C. C. M.; GUAZZELLI, M. A.; AGOPIAN, P. G. D.; MARTINO, J. A.; SIMOEN, E.; CLAEYS, C. Parasitic conduction response to X-ray radiation in unstrained and strained triple-gate SOI MuGFETs. Journal of Integrated Circuits and Systems, v. 9, n. 2, p. 97-102, 2014.
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© 2014, Journal of Integrated Circuits and Systems. All rights reserved.In this work, the X-ray irradiation impact on the back gate conduction and drain current for Triple-Gate SOI FinFETs is investigated for strained and unstrained devices. Both types (P and N) of transistors were analyzed. Since X-rays promote trapped positive charges in the buried oxide, the second interface threshold voltage shifts to lower gate voltage. The performance of n-channel devices presented a strong degradation when submitted to X-rays, while for p-channel devices the opposite trend was observed. Two different dose rates were analyzed.