Parasitic conduction response to X-ray radiation in unstrained and strained triple-gate SOI MuGFETs

Carregando...
Imagem de Miniatura
Citações na Scopus
0
Tipo de produção
Artigo
Data
2014-05-05
Autores
TEIXEIRA, F. F.
BORDALLO, C. C. M.
Marcilei Aparecida Guazzelli
AGOPIAN, P. G. D.
MARTINO, J. A.
SIMOEN, E.
CLAEYS, C.
Orientador
Periódico
Journal of Integrated Circuits and Systems
Título da Revista
ISSN da Revista
Título de Volume
Citação
TEIXEIRA, F. F.; BORDALLO, C. C. M.; GUAZZELLI, M. A.; AGOPIAN, P. G. D.; MARTINO, J. A.; SIMOEN, E.; CLAEYS, C. Parasitic conduction response to X-ray radiation in unstrained and strained triple-gate SOI MuGFETs. Journal of Integrated Circuits and Systems, v. 9, n. 2, p. 97-102, 2014.
Texto completo (DOI)
Palavras-chave
Resumo
© 2014, Journal of Integrated Circuits and Systems. All rights reserved.In this work, the X-ray irradiation impact on the back gate conduction and drain current for Triple-Gate SOI FinFETs is investigated for strained and unstrained devices. Both types (P and N) of transistors were analyzed. Since X-rays promote trapped positive charges in the buried oxide, the second interface threshold voltage shifts to lower gate voltage. The performance of n-channel devices presented a strong degradation when submitted to X-rays, while for p-channel devices the opposite trend was observed. Two different dose rates were analyzed.

Coleções