Parasitic conduction response to X-ray radiation in unstrained and strained triple-gate SOI MuGFETs
Arquivos
Tipo de produção
Artigo
Data de publicação
2014-05-05
Periódico
Journal of Integrated Circuits and Systems
Editor
Texto completo na Scopus
Citações na Scopus
0
Autores
TEIXEIRA, F. F.
BORDALLO, C. C. M.
Marcilei Aparecida Guazzelli
AGOPIAN, P. G. D.
MARTINO, J. A.
SIMOEN, E.
CLAEYS, C.
Orientadores
Resumo
© 2014, Journal of Integrated Circuits and Systems. All rights reserved.In this work, the X-ray irradiation impact on the back gate conduction and drain current for Triple-Gate SOI FinFETs is investigated for strained and unstrained devices. Both types (P and N) of transistors were analyzed. Since X-rays promote trapped positive charges in the buried oxide, the second interface threshold voltage shifts to lower gate voltage. The performance of n-channel devices presented a strong degradation when submitted to X-rays, while for p-channel devices the opposite trend was observed. Two different dose rates were analyzed.
Citação
TEIXEIRA, F. F.; BORDALLO, C. C. M.; GUAZZELLI, M. A.; AGOPIAN, P. G. D.; MARTINO, J. A.; SIMOEN, E.; CLAEYS, C. Parasitic conduction response to X-ray radiation in unstrained and strained triple-gate SOI MuGFETs. Journal of Integrated Circuits and Systems, v. 9, n. 2, p. 97-102, 2014.
Palavras-chave
Keywords
Multiple-Gate MOSFETs (MuGFETs); Parasitic back conduction; X-ray radiation