Low power highly linear temperature sensor based on SOI lateral PIN diodes
N/D
Tipo de produção
Artigo de evento
Data de publicação
2017
Texto completo (DOI)
Periódico
2016 SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2016
Editor
Texto completo na Scopus
Citações na Scopus
5
Autores
Michelly De Souza
Marcelo Antonio Pavanello
FLANDRE, D.
Orientadores
Resumo
This work presents a highly linear temperature sensors implemented with SOI Lateral PIN Diodes, for low-power applications, biased on the exponential region of the I-V characteristics. Experimental results are shown for temperatures ranging between 150 K and 400 K, showing that depending on the selected bias currents, the linearity can be improved in comparison to a single SOI PIN diode. Simulations results show that the sensing range can be extended for both lower and higher temperatures maintaining high linearity.
Citação
DE SOUZA, M.; PAVANELLO, M. A.; FLANDRE, D. Low power highly linear temperature sensor based on SOI lateral PIN diodes. 2016 SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2016. Oct. 2016.
Palavras-chave
Keywords
Low Power; PIN Diode; PTAT sensor; SOI; Temperature Sensor
Assuntos Scopus
High linearity; IV characteristics; Linear temperature; Low Power; Low power application; PiN diode; Sensing ranges