Low power highly linear temperature sensor based on SOI lateral PIN diodes

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5
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2017
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Michelly De Souza
Marcelo Antonio Pavanello
FLANDRE, D.
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2016 SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2016
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DE SOUZA, M.; PAVANELLO, M. A.; FLANDRE, D. Low power highly linear temperature sensor based on SOI lateral PIN diodes. 2016 SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2016. Oct. 2016.
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This work presents a highly linear temperature sensors implemented with SOI Lateral PIN Diodes, for low-power applications, biased on the exponential region of the I-V characteristics. Experimental results are shown for temperatures ranging between 150 K and 400 K, showing that depending on the selected bias currents, the linearity can be improved in comparison to a single SOI PIN diode. Simulations results show that the sensing range can be extended for both lower and higher temperatures maintaining high linearity.

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