Analysis of carrier mobility in triple gate SOI nFinFET combining rotated substrate and strain
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2016-11-02
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RIBEIRO, T. A.
SIMOEN, E.
CLAEYS, C.
MARTINO, J. A.
Marcelo Antonio Pavanello
SIMOEN, E.
CLAEYS, C.
MARTINO, J. A.
Marcelo Antonio Pavanello
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SBMicro 2016 - 31st Symposium on Microelectronics Technology and Devices: Chip on the Mountains, co-located 29th SBCCI - Circuits and Systems Design, 6th WCAS - IC Design Cases, 1st INSCIT - Electronic Instrumentation and 16th SForum - Undergraduate-Student Forum
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RIBEIRO, T. A.; SIMOEN, E.; CLAEYS, C.; MARTINO, J. A.; PAVANELLO, M. A. Analysis of carrier mobility in triple gate SOI nFinFET combining rotated substrate and strain. SBMicro 2016 - 31st Symposium on Microelectronics Technology and Devices: Chip on the Mountains, co-located 29th SBCCI - Circuits and Systems Design, 6th WCAS - IC Design Cases, 1st INSCIT - Electronic Instrumentation and 16th SForum - Undergraduate-Student Forum Nov, 2016.
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This paper studies the carrier mobility of triple gate SOI nFinFETs, fabricated on standard and rotated substrates, varying the fin width. The effective mobility results were extracted using the Split CV method, where FinFETs fabricated with rotated substrate show a higher maximum mobility than devices fabricated with a standard substrate. The effects of biaxial strain were also analyzed for the maximum mobility and it is shown that the strain increases the mobility for standard and rotated substrates. The mobility degradation was analyzed and compared for all devices. The results show that for standard devices the strain decreases the degradation of the mobility, whereas for the rotated devices strain results in an increase in this degradation for small fin width.