Boosting the radiation hardness and higher reestablishing pre-rad conditions by using OCTO layout style for MOSFETs

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dc.contributor.authorDE SOUZA FINO, L. N.
dc.contributor.authorMarcilei Aparecida Guazzelli
dc.contributor.authorRENAUX, C.
dc.contributor.authorFLANDRE, D.
dc.contributor.authorSalvador Gimenez
dc.contributor.authorOrcidhttps://orcid.org/0000-0001-7110-7241
dc.contributor.authorOrcidhttps://orcid.org/0000-0002-3616-9559
dc.date.accessioned2022-01-12T22:00:28Z
dc.date.available2022-01-12T22:00:28Z
dc.date.issued2014-09-05
dc.description.abstractThis manuscript has the objective to perform an experimental comparative analysis of the total ionizing dose influence in the Silicon-On-Insulator Metal-Oxide-Semiconductor Field Effect Transistor implemented with the octagonal gate shape (OCTO) and the standard one (rectangular gate shape) counterpart, after a X-ray radiation exposure. The back-gate bias technique is applied in these devices to reestablish the threshold voltage and subthreshold slope that were degraded by the ionizing radiation effects. Since the octagonal layout style maintains a better electrical performance after radiation, a smaller back-gate bias to recover the pre-rad operation is required in comparison to the conventional counterpart. This is mainly because the parasitic transistors in the bird's beak region are practically deactivated by the particular octagonal gate geometry.
dc.identifier.citationDE SOUZA FINO, L. N.; GUAZZELLI, M. A.; RENAUX, C.; FLANDRE, D.; GIMENEZ, S. Boosting the radiation hardness and higher reestablishing pre-rad conditions by using OCTO layout style for MOSFETs. 2014 29th Symposium on Microelectronics Technology and Devices: Chip in Aracaju, SBMicro 2014, Sept. 2014.
dc.identifier.doi10.1109/SBMicro.2014.6940133
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/4002
dc.relation.ispartof2014 29th Symposium on Microelectronics Technology and Devices: Chip in Aracaju, SBMicro 2014
dc.rightsAcesso Restrito
dc.subject.otherlanguageback-gate bias technique
dc.subject.otherlanguageDEPAMBBRE
dc.subject.otherlanguageOctogonal layout for MOSFET
dc.subject.otherlanguageTID effects
dc.titleBoosting the radiation hardness and higher reestablishing pre-rad conditions by using OCTO layout style for MOSFETs
dc.typeArtigo de evento
fei.scopus.citations1
fei.scopus.eid2-s2.0-84912101305
fei.scopus.subjectBack-gate bias
fei.scopus.subjectComparative analysis
fei.scopus.subjectDEPAMBBRE
fei.scopus.subjectElectrical performance
fei.scopus.subjectMOS-FET
fei.scopus.subjectParasitic transistors
fei.scopus.subjectSilicon-on-insulator metal oxide semiconductor field effect
fei.scopus.subjectTID effects
fei.scopus.updated2024-07-01
fei.scopus.urlhttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84912101305&origin=inward
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