Harmonic distortion analysis of double gate graded-channel MOSFETs operating in saturation

Página do item simplificado
dc.contributor.authorDoria R.T.
dc.contributor.authorCerdeira A.
dc.contributor.authorRaskin J.-P.
dc.contributor.authorFlandre D.
dc.contributor.authorPavanello M.A.
dc.date.accessioned2019-08-19T23:45:09Z
dc.date.available2019-08-19T23:45:09Z
dc.date.issued2008
dc.description.abstractIn this work we present an analysis of harmonic distortion (HD) in graded-channel (GC) gate-all-around (GAA) devices operating in saturation region for analog applications. The study has been performed through device characterization and two-dimensional process and device simulations. The overall study has been done on the total and third order HDs. When applied in the saturation regime as an amplifier, the GC outperforms conventional GAA transistors presenting simultaneously higher transconductance, lower drain output conductance and more than 15 dB improved linearity. The influence of channel length reduction on the HD is also analyzed. Although slight linearity degradation is observed in both the conventional and the GC devices when reducing the channel length, the HD presented by the GC transistor is significantly lower than the one showed by conventional device for any studied channel length. This allows AC input signal amplitude up to 20 times higher than the conventional GAA for a same specified distortion level. © 2008 Elsevier Ltd. All rights reserved.
dc.description.firstpage1663
dc.description.issuenumber12
dc.description.lastpage1670
dc.description.volume39
dc.identifier.citationDORIA, Rodrigo Trevisoli; CERDEIRA, Antonio; RASKIN, Jean Pierre; FLANDRE, Denis; PAVANELLO, Marcelo A.. Harmonic distortion analysis of double gate graded-channel MOSFETs operating in saturation. Microelectronics (Luton) (Cessou em 1978. Cont. ISSN 0959-8324 Microelectronics Journal), v. 39, n. 12, p. 1663-1670, 2008.
dc.identifier.doi10.1016/j.mejo.2008.02.006
dc.identifier.issn0026-2692
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/1071
dc.relation.ispartofMicroelectronics Journal
dc.rightsAcesso Restrito
dc.subject.otherlanguageAsymmetric MOSFET
dc.subject.otherlanguageChannel engineering
dc.subject.otherlanguageDouble gate
dc.subject.otherlanguageGate-all-around
dc.subject.otherlanguageGraded-channel
dc.subject.otherlanguageHarmonic distortion
dc.subject.otherlanguageNon-linearity
dc.subject.otherlanguageSilicon-on-insulator
dc.titleHarmonic distortion analysis of double gate graded-channel MOSFETs operating in saturation
dc.typeArtigo
fei.scopus.citations27
fei.scopus.eid2-s2.0-56049089662
fei.scopus.subjectAsymmetric MOSFET
fei.scopus.subjectChannel engineering
fei.scopus.subjectDouble gate
fei.scopus.subjectGate-all-around
fei.scopus.subjectGraded-channel
fei.scopus.subjectNon-linearity
fei.scopus.subjectSilicon-on-insulator
fei.scopus.updated2024-07-01
fei.scopus.urlhttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=56049089662&origin=inward
Arquivos
Coleções
Artigos