Analysis of lateral SOI PIN diodes for the detection of blue and UV wavelengths in a wide temperature range
N/D
Tipo de produção
Artigo de evento
Data de publicação
2010-01-05
Texto completo (DOI)
Periódico
ECS Transactions
Editor
Texto completo na Scopus
Citações na Scopus
7
Autores
Michelly De Souza
BULTEEL, O.
FLANDRE, D.
Marcelo Antonio Pavanello
Orientadores
Resumo
This work presents an analysis on the performance of lateral thin-film SOI PIN diodes for the detection of short wavelengths, in the range of blue and ultra-violet (UV) wavelengms, as a function of the temperature, reaching the cryogenic regime. Measurements performed for temperatures ranging from 100 K to 400 K showed mat the optical responsitivity of these photodetectors is affected by temperature change, being reduced at low and moderately high temperatures. Two-dimensional numerical simulations were performed showing the same trends as the experimental data, and were used to predict the influence of silicon film thickness downscaling on me photodetector performance. ©The Electrochemical Society.
Citação
DE SOUZA, M.; BULTEEL, O.; FLANDRE, D.; PAVANELLO, M. A. Analysis of lateral SOI PIN diodes for the detection of blue and UV wavelengths in a wide temperature range. ECS Transactions, v. 31, n.1, p. 199-206, 2010.
Palavras-chave
Keywords
Assuntos Scopus
Down-scaling; Experimental data; Moderately high temperature; PiN diode; Short wavelengths; Silicon film thickness; Temperature changes; Temperature range; Two-dimensional numerical simulation; Ultra-violet; UV wavelength