Analysis of lateral SOI PIN diodes for the detection of blue and UV wavelengths in a wide temperature range

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7
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2010-01-05
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Michelly De Souza
BULTEEL, O.
FLANDRE, D.
Marcelo Antonio Pavanello
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ECS Transactions
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DE SOUZA, M.; BULTEEL, O.; FLANDRE, D.; PAVANELLO, M. A. Analysis of lateral SOI PIN diodes for the detection of blue and UV wavelengths in a wide temperature range. ECS Transactions, v. 31, n.1, p. 199-206, 2010.
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This work presents an analysis on the performance of lateral thin-film SOI PIN diodes for the detection of short wavelengths, in the range of blue and ultra-violet (UV) wavelengms, as a function of the temperature, reaching the cryogenic regime. Measurements performed for temperatures ranging from 100 K to 400 K showed mat the optical responsitivity of these photodetectors is affected by temperature change, being reduced at low and moderately high temperatures. Two-dimensional numerical simulations were performed showing the same trends as the experimental data, and were used to predict the influence of silicon film thickness downscaling on me photodetector performance. ©The Electrochemical Society.

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